Patents by Inventor Simon John Mahon

Simon John Mahon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FET operational temperature determination by field plate resistance thermometry
    Patent number: 10855230
    Abstract: Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: December 1, 2020
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: Simon John Mahon, Allen W. Hanson, Bryan Schwitter, Chuanxin Lian, Rajesh Baskaran, Frank Gao
  • FET operational temperature determination by gate structure resistance thermometry
    Patent number: 10790787
    Abstract: Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: September 29, 2020
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventors: Simon John Mahon, Allen W. Hanson, Chuanxin Lian, Frank Gao, Rajesh Baskaran, Bryan Schwitter
  • FET OPERATIONAL TEMPERATURE DETERMINATION BY GATE STRUCTURE RESISTANCE THERMOMETRY
    Publication number: 20200144970
    Abstract: Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
    Type: Application
    Filed: August 12, 2019
    Publication date: May 7, 2020
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: Simon John Mahon, Allen W. Hanson, Chuanxin Lian, Frank Gao, Rajesh Baskaran, Bryan Schwitter
  • FET OPERATIONAL TEMPERATURE DETERMINATION BY FIELD PLATE RESISTANCE THERMOMETRY
    Publication number: 20200144969
    Abstract: Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
    Type: Application
    Filed: August 12, 2019
    Publication date: May 7, 2020
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: Simon John Mahon, Allen W. Hanson, Bryan Schwitter, Chuanxin Lian, Rajesh Baskaran, Frank Gao
  • OPERATIONAL TEMPERATURE DETERMINATION IN BIPOLAR TRANSISTORS BY RESISTANCE THERMOMETRY
    Publication number: 20190078941
    Abstract: Thermally-sensitive structure and methods for sensing the temperature in a region of a bipolar junction transistor (BJT) during device operation are described. The region may be at or near a region of highest temperature attained in the BJT. Metal resistance thermometry (MRT) can be implemented to assess a peak operating temperature of a BJT.
    Type: Application
    Filed: September 14, 2017
    Publication date: March 14, 2019
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: Simon John Mahon, Allen W. Hanson
  • FET OPERATIONAL TEMPERATURE DETERMINATION BY FIELD PLATE RESISTANCE THERMOMETRY
    Publication number: 20190028066
    Abstract: Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
    Type: Application
    Filed: July 24, 2017
    Publication date: January 24, 2019
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: Simon John Mahon, Allen W. Hanson
  • FET OPERATIONAL TEMPERATURE DETERMINATION BY GATE STRUCTURE RESISTANCE THERMOMETRY
    Publication number: 20190028065
    Abstract: Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
    Type: Application
    Filed: July 24, 2017
    Publication date: January 24, 2019
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: Simon John Mahon, Allen W. Hanson