Abstract: A method for plasma treating an etched opening formed in a porous low-K material to improve barrier layer integrity including providing a substrate comprising an etched opening formed in an insulating dielectric layer including porous low-K silicon oxide according to an overlying patterned resist layer; plasma treating according to a plasma process the etched opening to remove the resist layer and increase a surface density of the insulating dielectric layer within the etched opening; and, blanket depositing a barrier layer over the etched opening.

Abstract: A SiOC layer and/or a SiC layer of an etch stop layer may be improved by altering the process used to form them. In a bi-layer structure, a SiOC layer and/or a SiC layer may be improved to provide better reliability. A silicon carbide (SiC) layer may be used to form a single-layer etch stop layer, while also acting as a glue layer to improve interface adhesion. Preferably, the SiC layer is formed in a reaction chamber having a flow of substantially pure trimetholsilane (3MS) streamed into and through the reaction chamber under a pressure of less than about 2 torr therein. Preferably, the reaction chamber is energized with high frequency RF power of about 100 watts or more. Preferably, the SiOC layer is formed in a reaction chamber having a flow of 3MS and CO2, and is energized with low frequency RF power of about 100 watts or more.

Abstract: A low voltage different signaling (LVDS) includes an LVDS transmitter and an LVDS receiver. The LVDS transmitter includes a feedback compensation circuit, which adjusts and stabilizes the analog image signal to be transmitted to the LVDS receiver according to the voltage difference of the analog image signal and a base signal. The feedback compensation circuit includes a voltage-to-current converting circuit and a pair of current mirror circuits.

Abstract: A method for plasma treating an etched opening formed in a porous low-K material to improve barrier layer integrity including providing a substrate comprising an etched opening formed in an insulating dielectric layer including porous low-K silicon oxide according to an overlying patterned resist layer; plasma treating according to a plasma process the etched opening to remove the resist layer and increase a surface density of the insulating dielectric layer within the etched opening; and, blanket depositing a barrier layer over the etched opening.

Abstract: A low voltage different signaling (LVDS) includes an LVDS transmitter and an LVDS receiver. The LVDS transmitter includes a feedback compensation circuit, which adjusts and stabilizes the analog image signal to be transmitted to the LVDS receiver according to the voltage difference of the analog image signal and a base signal. The feedback compensation circuit includes a voltage-to-current converting circuit and a pair of current mirror circuits.

Abstract: An outer casing assembly for ceiling-fan motors includes an upper cover with a top surface and a downward-curving flange, having a central opening in the top surface and a plurality of bolt holes in the periphery of the downward-curving flange; a middle guard shell formed in a hollow body structure with an external circumference corresponding to the inner periphery of the downward-curving flange of the upper cover; and a lower cover with a bottom surface and an upward-curving flange corresponding to the structure of the upper cover, having a lower central opening in the bottom surface and a plurality of bolt holes in the periphery of the upward-curving flange. The upper cover, the middle guard shell and the lower cover are all made of mesh material, wherein the middle guard shell is vertically positioned between the upper cover and the lower cover both of which are connected together by screw bolts through the bolt holes of both the upper and lower covers.