Abstract: A transmitter includes a distributor that receives a stream of digital video samples and distributes these samples into vectors in a buffer per a permutation. A digital-to-analog converter (DAC) per vector receives from its corresponding vector the digital video samples and converts the digital video samples into analog video samples. Each source driver includes a collector that receives analog video samples from each DAC and stores the analog video samples of the corresponding vector, and amplifiers that receive the stored analog video samples in parallel from the collector and amplifies the stored analog video samples onto a column of the display panel. An AR/VR headset uses analog video transport to its processor, and from the processor to a display of the visor. Analog video transport is used between a camera and processor and between processor and display. Analog video is transmitted to or within the headset wired or wirelessly.

Abstract: A video stream is encoded using spread spectrum video transport and sent as an analog signal to a display of a VR visor where a decoder integrated with a source driver decodes the analog signal and drives the display. The analog signal is sent wirelessly to the display where it is received, converted to wired format, decoded and displayed. A wireless SSVT analog signal is received at the headset processor and forwarded to the VR visor for reception, conversion, decoding and display. A wireless SSVT analog signal is received at the processor, converted to wired format, sent wirelessly to the display where it is received at a receiver, converted to wired format, decoded and displayed. A video stream is stored in persistent storage on the headset processor using SSVT encoding. The decoder integrated with a source driver of a display is implemented directly on the glass of the display panel.

Abstract: A video stream is encoded using spread spectrum video transport and sent as an analog signal to a display of a VR visor where a decoder integrated with a source driver decodes the analog signal and drives the display. The analog signal is sent wirelessly to the display where it is received, converted to wired format, decoded and displayed. A wireless SSVT analog signal is received at the headset processor and forwarded to the VR visor for reception, conversion, decoding and display. A wireless SSVT analog signal is received at the processor, converted to wired format, sent wirelessly to the display where it is received at a receiver, converted to wired format, decoded and displayed. A video stream is stored in persistent storage on the headset processor using SSVT encoding. The decoder integrated with a source driver of a display is implemented directly on the glass of the display panel.

Abstract: A semiconductor structure is provided which eliminates the contact resistance traditionally associated with a junction between one or more contacts and a buried conductive structure formed in the semiconductor structure. The semiconductor structure includes a first insulating layer formed on a semiconductor layer and a conductive structure formed on at least a portion of the first insulating layer. A second insulating layer is formed on at least a portion of the conductive stricture. At least one contact is formed through the second insulating layer and electrically connected to the conductive structure. The contact and the conductive structure are formed as a substantially homogeneous structure in a same processing step.

Abstract: A method of forming a buried conductive structure in a semiconductor device includes the steps of forming a first insulating layer on a semiconductor layer; forming a sacrificial structure on at least a portion of the first insulating layer; forming a second insulating layer on at least a portion of the sacrificial structure; forming at least one opening through the second insulating layer to at least partially expose the sacrificial structure; substantially removing the sacrificial structure, leaving a cavity; and substantially filling the cavity and the at least one opening with a conductive material. The sacrificial structure may be substantially removed by etching the sacrificial structure using an isotropic etchant.

Abstract: Phenomena such as electromigration and stress-induced migration occurring in metal interconnects of devices such as integrated circuits are inhibited by use of underlying non-planarities. Thus the material underlying the interconnect is formed to have non-planarities typically of at least 0.02 ?m in height and advantageously within 100 ?m of another such non-planarity. Such non-planarities, it is contemplated, reduce grain boundary movement in the overlying interconnect with a concomitant reduction in void aggregation.