Abstract: Embodiments of the present disclosure relate to a multi-function circuit. The circuit comprises a low side circuit that is comprised with a first set of enhancement mode transistors. The half bridge circuit also includes a high side circuit that is comprised of a second set of transistors. Each of the enhancement mode transistors of the first set and second set of enhancement mode transistors are Gallium Nitride (GaN) transistors. In some embodiments, the GaN transistors are High Electron Mobility Transistors (HEMTs). In additional embodiments, the GaN transistors are configured and operated as saturated switches. In further embodiments, the half bridge circuit is designed as a discrete circuit. Additionally, each of the first set and second set of transistors, diodes, resistors, and all passive elements are discrete components arranged to form a half bridge circuit. In fact, the entire half bridge circuit is built from discrete components.

Abstract: Embodiments of the present disclosure relate to a multi-function circuit. The circuit comprises a low side circuit that is comprised with a first set of enhancement mode transistors. The half bridge circuit also includes a high side circuit that is comprised of a second set of transistors. Each of the enhancement mode transistors of the first set and second set of enhancement mode transistors are Gallium Nitride (GaN) transistors. In some embodiments, the GaN transistors are High Electron Mobility Transistors (HEMTs). In additional embodiments, the GaN transistors are configured and operated as saturated switches. In further embodiments, the half bridge circuit is designed as a discrete circuit. Additionally, each of the first set and second set of transistors, diodes, resistors, and all passive elements are discrete components arranged to form a half bridge circuit. In fact, the entire half bridge circuit is built from discrete components.

Abstract: A detection circuit includes an under-voltage circuit. The under-voltage circuit includes a first GaN high electron mobility transistor (HEMT) configured to operate as both a voltage comparator and a voltage reference. The detection circuit can also include an over-voltage detection circuit. The over-voltage detection circuit includes a second GaN HEMT that is also configured to operate as both a voltage comparator and a voltage reference. Each of the under-voltage circuit and over-voltage circuit includes a GaN HEMT logic inversion element to provide electrical hysteresis. Also, the under-voltage detection circuit and the over-voltage detection circuit are configured to provide outputs to a single ‘power good’ terminal. The first GaN HEMT can be configured to use its gate source threshold voltage for voltage comparison and reference. The second GaN HEMT can be configured to use its gate source threshold voltage for voltage comparison and reference.