Patents by Inventor Simon Philip Spencer HASTINGS

Simon Philip Spencer HASTINGS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11803127
    Abstract: A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.
    Type: Grant
    Filed: November 4, 2019
    Date of Patent: October 31, 2023
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Chenxi Lin, Cyrus Emil Tabery, Hakki Ergün Cekli, Simon Philip Spencer Hastings, Boris Menchtchikov, Yi Zou, Yana Cheng, Maxime Philippe Frederic Genin, Tzu-Chao Chen, Davit Harutyunyan, Youping Zhang
  • Patent number: 11754931
    Abstract: A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.
    Type: Grant
    Filed: March 18, 2020
    Date of Patent: September 12, 2023
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Roy Werkman, David Frans Simon Deckers, Simon Philip Spencer Hastings, Jeffrey Thomas Ziebarth, Samee Ur Rehman, Davit Harutyunyan, Chenxi Lin, Yana Cheng
  • Patent number: 11714357
    Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: August 1, 2023
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Alexander Ypma, Cyrus Emil Tabery, Simon Hendrik Celine Van Gorp, Chenxi Lin, Dag Sonntag, Hakki Ergün Cekli, Ruben Alvarez Sanchez, Shih-Chin Liu, Simon Philip Spencer Hastings, Boris Menchtchikov, Christiaan Theodoor De Ruiter, Peter Ten Berge, Michael James Lercel, Wei Duan, Pierre-Yves Jerome Yvan Guittet
  • Publication number: 20220252988
    Abstract: A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.
    Type: Application
    Filed: March 18, 2020
    Publication date: August 11, 2022
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Roy WERKMAN, David Frans Simon DECKERS, Simon Philip Spencer HASTINGS, Jeffrey Thomas ZIEBARTH, Samee Ur REHMAN, Davit HARUTYUNYAN, Chenxi LIN, Yana CHENG
  • Patent number: 11281110
    Abstract: A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: March 22, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Jeroen Van Dongen, Wim Tjibbo Tel, Sarathi Roy, Yichen Zhang, Andrea Cavalli, Bart Laurens Sjenitzer, Simon Philip Spencer Hastings
  • Publication number: 20220026810
    Abstract: A method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method including: obtaining a set of pre-process metrology data; processing the set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed set of pre-process metrology data to determine the correction for the semiconductor manufacturing process.
    Type: Application
    Filed: November 14, 2019
    Publication date: January 27, 2022
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Nicolaas Petrus Marcus BRANTJES, Matthijs COX, Boris MENCHTCHIKOV, Cyrus Emil TABERY, Youping ZHANG, Yi ZOU, Chenxi LIN, Yana CHENG, Simon Philip Spencer HASTINGS, Maxim Philippe Frederic GENIN
  • Publication number: 20220011728
    Abstract: A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.
    Type: Application
    Filed: October 30, 2019
    Publication date: January 13, 2022
    Inventors: Youping ZHANG, Boris MENCHTCHIKOV, Cyrus Emil TABERY, Yi ZOU, Chenxi LIN, Yana CHENG, Simon Philip Spencer HASTINGS, Maxime Philippe Frederic GENIN
  • Publication number: 20210397172
    Abstract: A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.
    Type: Application
    Filed: October 30, 2019
    Publication date: December 23, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Abraham SLACHTER, Wim Tjibbo TEL, Daan Maurits SLOTBOOM, Vadim Yourievich TIMOSHKOV, Koen Wilhelmus Cornelis Adrianus VAN DER STRATEN, Boris MENCHTCHIKOV, Simon Philip Spencer HASTINGS, Cyrus Emil TABERY, Maxime Philippe Frederic GENIN, Youping ZHANG, Yi ZOU, Chenxi LIN, Yana CHENG
  • Publication number: 20210389677
    Abstract: A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.
    Type: Application
    Filed: November 4, 2019
    Publication date: December 16, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Chenxi LIN, Cyrus Emil TABERY, Hakki Ergün CEKLI, Simon Philip Spencer HASTINGS, Boris MENCHTCHIKOV, Yi ZOU, Yana CHENG, Maxime Philippe Frederic GENIN, Tzu-Chao CHEN, Davit HARUTYUNYAN, Youping ZHANG
  • Publication number: 20210325788
    Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.
    Type: Application
    Filed: June 30, 2021
    Publication date: October 21, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Alexander YPMA, Cyrus Emil TABERY, Simon Hendrik Celine VAN GORP, Chenxi LIN, Dag SONNTAG, Hakki Ergün CEKLI, Ruben ALVAREZ SANCHEZ, Shih-Chin LIU, Simon Philip Spencer HASTINGS, Boris MENCHTCHIKOV, Christiaan Theodoor DE RUITER, Peter TEN BERGE, Michael James LERCEL, Wei DUAN, Pierre-Yves Jerome Yvan GUITTET
  • Publication number: 20210255547
    Abstract: A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.
    Type: Application
    Filed: May 20, 2019
    Publication date: August 19, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Jeroen Van Dongen, Wim Tjibbo TEL, Sarathi ROY, Yichen ZHANG, Andrea CAVALLI, Bart Laurens SJENITZER, Simon Philip Spencer HASTINGS
  • Patent number: 11086229
    Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: August 10, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Alexander Ypma, Cyrus Emil Tabery, Simon Hendrik Celine Van Gorp, Chenxi Lin, Dag Sonntag, Hakki Ergün Cekli, Ruben Alvarez Sanchez, Shih-Chin Liu, Simon Philip Spencer Hastings, Boris Menchtchikov, Christiaan Theodoor De Ruiter, Peter Ten Berge, Michael James Lercel, Wei Duan, Pierre-Yves Jerome Yvan Guittet
  • Patent number: 11022892
    Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1?, p1, p1+; ?1?, ?1, ?1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: June 1, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Patrick Warnaar, Simon Philip Spencer Hastings, Alberto Da Costa Assafrao, Lukasz Jerzy Macht
  • Publication number: 20210088917
    Abstract: A measurement mark is disclosed. According to certain embodiments, the measurement mark includes a set of first test structures developed in a first layer on a substrate, each of the set of first test structures comprising a plurality of first features made of first conducting material. The measurement mark also includes a set of second test structures developed in a second layer adjacent to the first layer, each of the set of second test structures comprising a plurality of second features made of second conducting material. The measurement mark is configured to indicate connectivity between the set of first test structures and associated second test structures in the set of second test structures when imaged using a voltage-contrast imaging method.
    Type: Application
    Filed: December 7, 2018
    Publication date: March 25, 2021
    Inventors: Cyrus Emil TABERY, Simon Hendrik Celine VAN GORP, Simon Philip Spencer HASTINGS, Brennan PETERSON
  • Publication number: 20200103761
    Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.
    Type: Application
    Filed: March 29, 2018
    Publication date: April 2, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Alexander YPMA, Cyrus Emil TABERY, Simon Hendrik Celine VAN GORP, Chenxi LIN, Dag SONNTAG, Hakki Ergün CEKLI, Ruben ALVAREZ SANCHEZ, Shih-Chin LIU, Simon Philip Spencer HASTINGS, Boris MENCHTCHIKOV, Christiaan Theodoor DE RUTTER, Peter TEN BERGE, Michael James LERCEL, Wei DUAN, Pierre-Yves Jerome Yvan GUITTET
  • Patent number: 10598483
    Abstract: Disclosed is a method of determining a characteristic of a target on a substrate and corresponding metrology apparatus and computer program. The method comprises determining a plurality of intensity asymmetry measurements from pairs of complementary pixels comprising a first image pixel in a first image of the target and a second image pixel in a second image of the target. The first image is obtained from first radiation scattered by the target and the second image is obtained from second radiation scattered by the target, the first radiation and second radiation comprising complementary non-zero diffraction orders. The characteristic of the target is then determined from said plurality of intensity asymmetry measurements.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: March 24, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Sergey Tarabrin, Simon Philip Spencer Hastings, Armand Eugene Albert Koolen
  • Publication number: 20200064744
    Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1?, p1, p1+; ?1?, ?1, ?1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.
    Type: Application
    Filed: October 30, 2019
    Publication date: February 27, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Patrick WARNAAR, Simon Philip Spencer Hastings, Alberto Da Costa Assafrao, Lukasz Jerzy MACHT
  • Patent number: 10466594
    Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1?, p1, p1+; ?1?, ?1, ?1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: November 5, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Patrick Warnaar, Simon Philip Spencer Hastings, Alberto Da Costa Assafrao, Lukasz Jerzy Macht
  • Publication number: 20180073866
    Abstract: Disclosed is a method of determining a characteristic of a target on a substrate and corresponding metrology apparatus and computer program. The method comprises determining a plurality of intensity asymmetry measurements from pairs of complementary pixels comprising a first image pixel in a first image of the target and a second image pixel in a second image of the target. The first image is obtained from first radiation scattered by the target and the second image is obtained from second radiation scattered by the target, the first radiation and second radiation comprising complementary non-zero diffraction orders. The characteristic of the target is then determined from said plurality of intensity asymmetry measurements.
    Type: Application
    Filed: August 22, 2017
    Publication date: March 15, 2018
    Applicant: ASML Netherlands B.V.
    Inventors: Sergey Tarabrin, Simon Philip Spencer Hastings, Armand Eugene Albert Koolen
  • Publication number: 20170248852
    Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1?, p1, p1+; ?1?, ?1, ?1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.
    Type: Application
    Filed: February 21, 2017
    Publication date: August 31, 2017
    Applicant: ASML Netherlands B.V.
    Inventors: Patrick WARNAAR, Simon Philip Spencer HASTINGS, Alberto DA COSTA ASSAFRAO, Lukasz Jerzy MACHT