Abstract: The present invention provides techniques for an in-situ measurement of resistivity profiles and dopant concentration distributions in semiconductor structures, such as shallow junctions. A substrate with a resistor test structure having a conduction circuit may be placed at a measurement station, surface layers may be successively removed from the conduction circuit at the measurement station, a sheet resistance of the conduction circuit may be measured at the measurement station after the removal of each surface layer to generate a plurality of sheet resistance measurements, and the resistivity profile may be calculated from the plurality of sheet resistance measurements.

Abstract: A grid for use in a collimator system for high energy waves such as X-rays and gamma rays includes a silicon base in which slits are etched along multiple separated lines. Located transversely in the slits are tungsten slats. Between the separated lines, silicon is removed by etching. Pairs of grids are longitudinally spaced apart along a longitudinal axis running transversely to the direction of the lines and the slats. Rotating the pair of grids about the longitudinal axis, and providing a detector associated with each grid pair provides for metering high energy rays.