Abstract: Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each side of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in.

Abstract: In one example, a wafer level burn-in system includes a first electrode plate for providing electrical contact simultaneously to contacts of a group of semiconductor devices borne by a semiconductor wafer on a device surface of the semiconductor wafer. A second electrode plate is employed for providing electrical contact to a substrate surface of the semiconductor wafer. Finally, an electrical power generator is employed for providing electrical power to the group of semiconductor devices through the contacts and the substrate of the semiconductor wafer through the first and second electrode plates.

Abstract: Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each side of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in.

Abstract: Systems for wafer level burn-in (WLBI) of semiconductor devices (210, 215) are presented. Systems having at least two electrodes for the application of electrical bias and/or thermal power on each side of a wafer (100) having back (105) and front (110) electrical contacts for semiconductor devices borne by the wafer (100) is described. Methods of wafer level burnin using the system are also described. Furthermore, a pliable conductive layer (220) is described for supplying pins or contacts (110) on device side of a wafer with electrical contact. The pliable conductive layer (220) can allow for an effective series R in each of the devices borne by the wafer (100), thus helping keep voltage bias level consistent. The pliable conductive layer can also prevent damage to a wafer when pressure is applied to it by chamber contacts (210, 215) and pressure onto surfaces of the wafer (100) during burn-in operations.