Abstract: A method of producing a photodiode having a layer structure that comprises a front-side first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type into which the first semiconductor layer is embedded, and an adjoining rear-side third semiconductor layer of the second conductivity type having a higher doping concentration in comparison with the second semiconductor layer includes providing a substrate wafer composed of a semiconductor material. A layer sequence having a first, second, and third semiconductor region on and/or in the substrate wafer is produced. The first and second semiconductor regions form the first and second semiconductor layers, and the layer sequence is partly removed from the rear side of the substrate wafer until the third semiconductor region is reduced to the thickness of the third semiconductor layer.

Abstract: The disclosure relates to a contacting circuit board for an energy storage module, in particular a lithium-ion battery, having a flexible plastic substrate which provides first conductor tracks for an electric connection of a sensor circuit board to connection poles of the energy storage module, wherein the plastic substrate has a first large side and a second large side oriented parallel hereto, wherein one of the two large sides is equipped with a heating device and wherein contacting elements interacting with the connection poles of the energy storage module are provided which are spaced apart from the plastic substrate.

Abstract: A vacuum cleaner includes a dirt sensor determining a value of an amount of dirt currently being sucked up, a floor sensor indicating a degree of hardness of the surface currently being vacuumed, a display module, and a control module having at least one automatic mode outputting the dirt value on the display module for a degree of hardness below a soft floor limit value, and otherwise determining a reduction value as the dirt value weighted using a weighting value less than one and outputting it on the display module. In a method for operating the vacuum cleaner, the dirt sensor determines the dirt value, the floor sensor determines the degree of hardness, and the control module in the automatic mode outputs the dirt value for a degree of hardness below the soft floor limit value and otherwise outputs the determined reduction value on the display module.

Abstract: A vacuum cleaner includes a dirt sensor determining a value of an amount of dirt currently being sucked up, a floor sensor indicating a degree of hardness of the surface currently being vacuumed, a display module, and a control module having at least one automatic mode outputting the dirt value on the display module for a degree of hardness below a soft floor limit value, and otherwise determining a reduction value as the dirt value weighted using a weighting value less than one and outputting it on the display module. In a method for operating the vacuum cleaner, the dirt sensor determines the dirt value, the floor sensor determines the degree of hardness, and the control module in the automatic mode outputs the dirt value for a degree of hardness below the soft floor limit value and otherwise outputs the determined reduction value on the display module.

Abstract: A method of producing a photodiode having a layer structure that comprises a front-side first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type into which the first semiconductor layer is embedded, and an adjoining rear-side third semiconductor layer of the second conductivity type having a higher doping concentration in comparison with the second semiconductor layer includes providing a substrate wafer composed of a semiconductor material. A layer sequence having a first, second, and third semiconductor region on and/or in the substrate wafer is produced. The first and second semiconductor regions form the first and second semiconductor layers, and the layer sequence is partly removed from the rear side of the substrate wafer until the third semiconductor region is reduced to the thickness of the third semiconductor layer.