Patents by Inventor Simon Ruel

Simon Ruel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250079122
    Abstract: A method for etching at least a portion of a layer based on a III-N material includes exposing a least one portion of an upper face of the III-N layer to a plasma treatment with bias voltage pulsing based on chlorine, wherein the plasma treatment is configured to present a duty cycle comprised between 20% and 80%. A first non-zero polarization bias is applied to the substrate during Ton, and a second polarization bias lesser than the first non-zero polarization bias or no polarization bias is applied, during Toff, so as to etch the portion of the III-N layer. The duration of the etching is significantly reduced to obtain a satisfying quality of the III-N layer for the operation of a microelectronic device, such as a transistor or a diode.
    Type: Application
    Filed: November 22, 2022
    Publication date: March 6, 2025
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, LAM RESEARCH CORPORATION
    Inventors: Nicolas POSSEME, Simon RUEL, Patricia PIMENTA BARROS, Bryan HELMER, Philippe THOUEILLE
  • Publication number: 20220068653
    Abstract: A method for etching at least one portion of a III-N material layer, including the implementation of the following steps of: a) first etching of a first part of the thickness of the portion of the III-N material layer, implemented by using a first plasma including chlorine; b) exposing at least one part of a remaining thickness of the portion of the III-N material layer to a second plasma including helium or hydrogen; c) chlorinating the part of the remaining thickness of the portion of the III-N material layer, transforming the part of the remaining thickness of the portion of the III-N material layer into a chlorinated material layer; d) second etching of the chlorinated material layer, implemented by using a third plasma including argon.
    Type: Application
    Filed: September 2, 2021
    Publication date: March 3, 2022
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Nicolas POSSEME, Simon RUEL
  • Patent number: 8977970
    Abstract: A method and system for handling media at a communication entity, wherein the media is associated with a communication session that is capable of entering an active state and an inactive state. The method comprises determining when the communication session is in an inactive state, causing the media associated with the communication session to be stored when the communication session has entered an inactive state, and causing the stored media to be conveyed to a user of the communication entity upon determination that the communication session has re-entered an active state.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: March 10, 2015
    Assignee: BCE Inc.
    Inventors: Denis Mercier, Simon Ruel, Benoit Landry, Richard-Philippe Wafer, Philippe Lefebvre
  • Publication number: 20090113304
    Abstract: A method and system for handling media at a communication entity, wherein the media is associated with a communication session that is capable of entering an active state and an inactive state. The method comprises determining when the communication session is in an inactive state, causing the media associated with the communication session to be stored when the communication session has entered an inactive state, and causing the stored media to be conveyed to a user of the communication entity upon determination that the communication session has re-entered an active state.
    Type: Application
    Filed: December 22, 2006
    Publication date: April 30, 2009
    Applicant: BCE INC.
    Inventors: Denis Mercier, Simon Ruel, Benoit Landry, Richard-Philippe Wafer, Philippe Lefebvre