Abstract: A wetsuit has a trunk portion having a pair of arm openings and a neck opening that fits about the torso of a wearer. The neck opening includes an area of reduced thickness that is folded to form a soft flexible edge. The neck opening is made by forming a channel of reduced thickness in a piece of material to surround the neck opening in the wetsuit, and folding the material along a centerline of the channel to form the soft flexible edge.

Abstract: An ESD protection circuit includes a discharge transistor formed in a p-well and having a drain coupled to the I/O pad, and a source coupled to ground. A MOS capacitor has a gate coupled to the I/O pad. A first resistor is coupled between the source and drain of the MOS capacitor and ground. A pulldown transistor has a drain coupled to the source and drain of the MOS capacitor, a source coupled to ground, and a gate coupled to a power-supply voltage node. A p-well control transistor has a source coupled to ground, and a drain coupled to the p-well. A second resistor is coupled between the I/O pad and the drain of the p-well control transistor. A pump transistor has a gate coupled to the gate of the discharge transistor, a drain coupled to the I/O pad, and a source coupled to the p-well.

Abstract: A wetsuit has a trunk portion having a pair of arm openings and a neck opening that fits about the torso of a wearer. The neck opening comprises an area of reduced thickness that is folded to form a soft flexible edge. The neck opening is made by forming a channel of reduced thickness in a piece of material to surround the neck opening in the wetsuit, and folding the material along a centerline of the channel to form the soft flexible edge.