Patents by Inventor Simon Yeou-Chong Yu

Simon Yeou-Chong Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating shallow trench isolation structures using a oxidized polysilicon trench mask
    Patent number: 5998278
    Abstract: A method of fabricating shallow trench isolation structures. A substrate over which a polysilicon layer and a masking layer are formed is provided. An opening is formed within the polysilicon layer and the masking layer. A trench is then formed within the substrate. An oxide layer is formed within the trench, and the surface of the oxide layer has a same level as the surface of the masking layer. The masking layer is removed and a thermal process is performed to transform the polysilicon layer to a silicon oxide layer. The silicon oxide layer is removed by an wet etching process and a shallow trench isolation structure is accomplished.
    Type: Grant
    Filed: April 7, 1998
    Date of Patent: December 7, 1999
    Assignee: United Integrated Circuits Corp.
    Inventor: Simon Yeou-Chong Yu