Abstract: There is provided an optoelectronic device having an operation range reaching and exceeding 4 ?m. The optoelectronic device includes a silicon or a silicon-based substrate and a heterostructure at least partially extending over the substrate. The heterostructure includes a stack of coextending photoactive layers and each photoactive layer includes one or two group IV elements. The photoactive layers are configured for absorbing and/or emitting short-wave infrared and mid-wave infrared radiation. In some embodiments, the short-wave infrared and mid-wave infrared radiation is in a wavelength range extending from about 1 ?m to about 8 ?m. Methods for manufacturing such an optoelectronic device and device processing are also provided. The methods include forming a heterostructure on a substrate, releasing the heterostructure from the substrate to form a relaxed membrane and transferring the relaxed membrane on a host substrate.

Abstract: There is provided a quantum heterostructure and related devices, as well as methods for manufacturing the same. The quantum heterostructure includes a stack of coextending GeSn buffer layers and each GeSn buffer layer has a different Sn content one from another. The quantum heterostructure also includes a quantum well extending over the stack of coextending GeSn buffer layers, the quantum well comprising a highly tensile-strained layer, the highly tensile-strained layer comprising at least one group IV element and having a strain greater than or equal to 1%. The quantum heterostructure is compatible with silicon-based processing, manufacturing, and technologies. The method includes changing a reactor temperature and varying a molar fraction of an Sn-based precursor to achieve a stack of coextending GeSn buffer layers, each having a different Sn composition, on a substrate provided inside the reactor chamber and forming the quantum well over the stack of coextending GeSn buffer layers.

Abstract: Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.

Abstract: Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.