Patents by Inventor Simone BOSSI

Simone BOSSI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Redistribution layer and integrated circuit including redistribution layer
    Patent number: 12021046
    Abstract: A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.
    Type: Grant
    Filed: September 14, 2022
    Date of Patent: June 25, 2024
    Assignee: STMICROELECTRONICS S.r.l.
    Inventors: Paolo Colpani, Samuele Sciarrillo, Ivan Venegoni, Francesco Maria Pipia, Simone Bossi, Carmela Cupeta
  • METHOD OF MANUFACTURING A REDISTRIBUTION LAYER, REDISTRIBUTION LAYER AND INTEGRATED CIRCUIT INCLUDING THE REDISTRIBUTION LAYER
    Publication number: 20230005848
    Abstract: A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.
    Type: Application
    Filed: September 14, 2022
    Publication date: January 5, 2023
    Applicant: STMICROELECTRONICS S.r.l.
    Inventors: Paolo COLPANI, Samuele SCIARRILLO, Ivan VENEGONI, Francesco Maria PIPIA, Simone BOSSI, Carmela CUPETA
  • Method of manufacturing a redistribution layer, redistribution layer and integrated circuit including the redistribution layer
    Patent number: 11469194
    Abstract: A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.
    Type: Grant
    Filed: August 7, 2019
    Date of Patent: October 11, 2022
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Paolo Colpani, Samuele Sciarrillo, Ivan Venegoni, Francesco Maria Pipia, Simone Bossi, Carmela Cupeta
  • METHOD OF MANUFACTURING A REDISTRIBUTION LAYER, REDISTRIBUTION LAYER AND INTEGRATED CIRCUIT INCLUDING THE REDISTRIBUTION LAYER
    Publication number: 20200051935
    Abstract: A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.
    Type: Application
    Filed: August 7, 2019
    Publication date: February 13, 2020
    Inventors: Michele MOLGG, Cosimo CIMINELLI, Paolo COLPANI, Samuele SCIARRILLO, Ivan VENEGONI, Francesco Maria PIPIA, Simone BOSSI, Carmela CUPETA