Patents by Inventor Simone FABIANO

Simone FABIANO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20260146177
    Abstract: The present invention relates to a method for manufacturing an ink comprising n-type conducting polymer, said method comprising the steps of: a) providing a catalyst or a catalyst precursor: b) oxidizing said catalyst precursor by means of an oxidizing promoter thus obtaining said catalyst: c) adding a monomer to a solvent system comprising a polar aprotic solvent in the presence of said catalyst, thus providing a reaction solution: d) allowing the monomer to polymerize in said reaction solution thus obtaining an ink comprising n-type conducting polymer, wherein said catalyst is a quinone comprising at least one branched side chain comprising at least one chiral centre.
    Type: Application
    Filed: May 17, 2024
    Publication date: May 28, 2026
    Applicant: WESTRA MATERIALS AB
    Inventors: Simone FABIANO, Chi-Yuan YANG, Marc-Antoine STOECKEL, Jun-Da HUANG, Qifan LI
  • Publication number: 20240101260
    Abstract: A device and method for detecting a phase transition between a liquid phase and a solid phase of a substance include a pair of electrodes, a sensing layer arranged in an electrical path between the pair of electrodes, and means for measuring a first electrical characteristic of the electrical path. The sensing layer includes a mixed ion and electron conducting composite material. The composite material has an electrical property, in particular electrical resistance, which shows a peak variation as a function of time at the phase transition, such as an onset of ice formation. Computing means process the first electrical characteristic to indicate an occurrence of the phase transition.
    Type: Application
    Filed: January 27, 2022
    Publication date: March 28, 2024
    Inventors: Carlo Saverio IORIO, Patrice Désiré DONGO, Patrick QUEECKERS, Dario FARINA, Simone FABIANO, Xavier CRISPIN, Anna HAKANSSON
  • Publication number: 20240002689
    Abstract: The present invention relates to a method for manufacturing a dispersion solution comprising nanoparticles of a rigid conjugated polymer having a dihedral angle from 0° to 20°, the method comprising the steps of: a) dissolving the rigid conjugated polymer in a first solvent system; b) combining the dissolved rigid conjugated polymer with a second solvent system thus obtaining a precipitate comprising the rigid conjugated polymer; c) collecting the precipitate comprising the rigid conjugated polymer; d) re-dispersing the precipitate in a third solvent system thus obtaining a dispersion solution comprising nanoparticles of the rigid conjugated polymer.
    Type: Application
    Filed: November 20, 2020
    Publication date: January 4, 2024
    Inventors: Simone FABIANO, Magnus BERGGREN, Marc-Antoine STOECKEL, Chi-Yuan YANG
  • Publication number: 20230340201
    Abstract: The present invention relates to an n-type conductive composition comprising a rigid conjugated polymer having a dihedral angle from 0° to 20° and an n-type polymeric cation. Further, the present invention relates to an n-type conductive ink comprising such a composition.
    Type: Application
    Filed: November 20, 2020
    Publication date: October 26, 2023
    Inventors: Simone FABIANO, Magnus BERGGREN, Marc-Antoine STOECKEL, Chi-Yuan YANG
  • Patent number: 9318596
    Abstract: A ferroelectric field-effect transistor device includes: a semiconductor layer; a ferroelectric layer; and an ion conductor layer arranged between the semiconductor layer and the ferroelectric layer and in contact with the semiconductor layer. Methods for producing the ferroelectric field-effect transistor device and using the ferroelectric field-effect transistor device in non-volatile memory devices that reduce a readout voltage to a voltage as low as 0.2 V are also disclosed.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: April 19, 2016
    Assignee: ACREO SWEDISH ICT AB
    Inventors: Simone Fabiano, Xavier Crispin, Magnus Berggren
  • Publication number: 20140264515
    Abstract: A ferroelectric field-effect transistor device includes: a semiconductor layer; a ferroelectric layer; and an ion conductor layer arranged between the semiconductor layer and the ferroelectric layer and in contact with the semiconductor layer. Methods for producing the ferroelectric field-effect transistor device and using the ferroelectric field-effect transistor device in non-volatile memory devices are also disclosed.
    Type: Application
    Filed: March 12, 2014
    Publication date: September 18, 2014
    Applicant: ACREO SWEDISH ICT AB
    Inventors: Simone FABIANO, Xavier CRISPIN, Magnus BERGGREN