Patents by Inventor Simone Lombardo
Simone Lombardo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11011229Abstract: Memory systems and memory programming methods are described. In one arrangement, a memory system includes a memory cell configured to have a plurality of different memory states, an access circuit coupled with the memory cell and configured to provide a first signal to a memory element of the memory cell to program the memory cell from a first memory state to a second memory state, and a current source coupled with the memory cell and configured to generate a second signal which is provided to the memory element of the memory cell after the first signal to complete programming of the memory cell from the first memory state to the second memory state.Type: GrantFiled: May 30, 2019Date of Patent: May 18, 2021Assignee: Micron Technology, Inc.Inventors: Richard E. Fackenthal, Simone Lombardo
-
Patent number: 10943656Abstract: Apparatus and methods utilize a replica circuit to generate a voltage for programming of a memory cell, such as a memory cell of a phase-change memory (PCM). Current passing through a circuit including the memory cell to be programmed is mirrored in a scaled or unscaled manner, and provided as an input to the replica circuit. The replica circuit represents voltage drops that should be encountered when programming the memory cell. An input voltage is also provided to the replica circuit, which affects the voltage drop within the replica circuit that represents the voltage drop of the cell. The voltage drop across the replica circuit can then be mirrored and provided to bias the circuit including the memory cell.Type: GrantFiled: May 22, 2019Date of Patent: March 9, 2021Assignee: Micron Technology, Inc.Inventors: Umberto Di Vincenzo, Simone Lombardo
-
Publication number: 20190341106Abstract: Apparatus and methods utilize a replica circuit to generate a voltage for programming of a memory cell, such as a memory cell of a phase-change memory (PCM). Current passing through a circuit including the memory cell to be programmed is mirrored in a scaled or unscaled manner, and provided as an input to the replica circuit. The replica circuit represents voltage drops that should be encountered when programming the memory cell. An input voltage is also provided to the replica circuit, which affects the voltage drop within the replica circuit that represents the voltage drop of the cell. The voltage drop across the replica circuit can then be mirrored and provided to bias the circuit including the memory cell.Type: ApplicationFiled: May 22, 2019Publication date: November 7, 2019Inventors: Umberto Di Vincenzo, Simone Lombardo
-
Publication number: 20190279714Abstract: Memory systems and memory programming methods are described. In one arrangement, a memory system includes a memory cell configured to have a plurality of different memory states, an access circuit coupled with the memory cell and configured to provide a first signal to a memory element of the memory cell to program the memory cell from a first memory state to a second memory state, and a current source coupled with the memory cell and configured to generate a second signal which is provided to the memory element of the memory cell after the first signal to complete programming of the memory cell from the first memory state to the second memory state.Type: ApplicationFiled: May 30, 2019Publication date: September 12, 2019Applicant: Micron Technology, Inc.Inventors: Richard E. Fackenthal, Simone Lombardo
-
Patent number: 10373681Abstract: Apparatus and methods utilize a replica circuit to generate a voltage for programming of a memory cell, such as a memory cell of a phase-change memory (PCM). Current passing through a circuit including the memory cell to be programmed is mirrored in a scaled or unscaled manner, and provided as an input to the replica circuit. The replica circuit represents voltage drops that should be encountered when programming the memory cell. An input voltage is also provided to the replica circuit, which affects the voltage drop within the replica circuit that represents the voltage drop of the cell. The voltage drop across the replica circuit can then be mirrored and provided to bias the circuit including the memory cell.Type: GrantFiled: August 7, 2017Date of Patent: August 6, 2019Assignee: Micron Technology, Inc.Inventors: Umberto Di Vincenzo, Simone Lombardo
-
Patent number: 10311953Abstract: Memory systems and memory programming methods are described. In one arrangement, a memory system includes a memory cell configured to have a plurality of different memory states, an access circuit coupled with the memory cell and configured to provide a first signal to a memory element of the memory cell to program the memory cell from a first memory state to a second memory state, and a current source coupled with the memory cell and configured to generate a second signal which is provided to the memory element of the memory cell after the first signal to complete programming of the memory cell from the first memory state to the second memory state.Type: GrantFiled: December 4, 2017Date of Patent: June 4, 2019Assignee: Micron Technology, Inc.Inventors: Richard E. Fackenthal, Simone Lombardo
-
Publication number: 20180090206Abstract: Memory systems and memory programming methods are described. In one arrangement, a memory system includes a memory cell configured to have a plurality of different memory states, an access circuit coupled with the memory cell and configured to provide a first signal to a memory element of the memory cell to program the memory cell from a first memory state to a second memory state, and a current source coupled with the memory cell and configured to generate a second signal which is provided to the memory element of the memory cell after the first signal to complete programming of the memory cell from the first memory state to the second memory state.Type: ApplicationFiled: December 4, 2017Publication date: March 29, 2018Applicant: Micron Technology, Inc.Inventors: Richard E. Fackenthal, Simone Lombardo
-
Publication number: 20170352417Abstract: Apparatus and methods utilize a replica circuit to generate a voltage for programming of a memory cell, such as a memory cell of a phase-change memory (PCM). Current passing through a circuit including the memory cell to be programmed is mirrored in a scaled or unscaled manner, and provided as an input to the replica circuit. The replica circuit represents voltage drops that should be encountered when programming the memory cell. An input voltage is also provided to the replica circuit, which affects the voltage drop within the replica circuit that represents the voltage drop of the cell. The voltage drop across the replica circuit can then be mirrored and provided to bias the circuit including the memory cell.Type: ApplicationFiled: August 7, 2017Publication date: December 7, 2017Inventors: Umberto Di Vincenzo, Simone Lombardo
-
Patent number: 9837151Abstract: Memory systems and memory programming methods are described. In one arrangement, a memory system includes a memory cell configured to have a plurality of different memory states, an access circuit coupled with the memory cell and configured to provide a first signal to a memory element of the memory cell to program the memory cell from a first memory state to a second memory state, and a current source coupled with the memory cell and configured to generate a second signal which is provided to the memory element of the memory cell after the first signal to complete programming of the memory cell from the first memory state to the second memory state.Type: GrantFiled: May 9, 2016Date of Patent: December 5, 2017Assignee: Micron Technology, Inc.Inventors: Richard E. Fackenthal, Simone Lombardo
-
Patent number: 9728256Abstract: Apparatus and methods utilize a replica circuit to generate a voltage for programming of a memory cell, such as a memory cell of a phase-change memory (PCM). Current passing through a circuit including the memory cell to be programmed is mirrored in a scaled or unscaled manner, and provided as an input to the replica circuit. The replica circuit represents voltage drops that should be encountered when programming the memory cell. An input voltage is also provided to the replica circuit, which affects the voltage drop within the replica circuit that represents the voltage drop of the cell. The voltage drop across the replica circuit can then be mirrored and provided to bias the circuit including the memory cell.Type: GrantFiled: February 26, 2016Date of Patent: August 8, 2017Assignee: MICRON TECHNOLOGY, INC.Inventors: Umberto Di Vincenzo, Simone Lombardo
-
Patent number: 9638304Abstract: A spur differential gear, including a planet carrier having a rim gear carrier with a plurality of radially inward protruding segments circumferentially displaced from each other creating windows therebetween, and first and second hubs fixedly secured to opposite axial sides of the plurality of segments, wherein the components of the rim gear carrier are non-rotatably connected to each other, first and second output gears, a revolving planet arrangement contradirectionally rotatably coupling the first and second output gears via a plurality of circumferentially displaced planet pairs, each planet pair including first and second revolving planets configured to rotate around their own planet axes, wherein the first and second revolving planets revolve with the planet carrier around the axis of rotation and are rotatable opposite it around the first and second planet axes, respectively, wherein one of the plurality of planet pairs is accommodated in each of the plurality of window segments.Type: GrantFiled: November 11, 2013Date of Patent: May 2, 2017Assignee: Schaeffler Technologies AG & Co. KGInventors: Thorsten Biermann, Harald Martini, Inaki Fernandez, Simone Lombardo, Franz Kurth
-
Publication number: 20160254051Abstract: Memory systems and memory programming methods are described. In one arrangement, a memory system includes a memory cell configured to have a plurality of different memory states, an access circuit coupled with the memory cell and configured to provide a first signal to a memory element of the memory cell to program the memory cell from a first memory state to a second memory state, and a current source coupled with the memory cell and configured to generate a second signal which is provided to the memory element of the memory cell after the first signal to complete programming of the memory cell from the first memory state to the second memory state.Type: ApplicationFiled: May 9, 2016Publication date: September 1, 2016Applicant: Micron Technology, Inc.Inventors: Richard E. Fackenthal, Simone Lombardo
-
Publication number: 20160180933Abstract: Apparatus and methods utilize a replica circuit to generate a voltage for programming of a memory cell, such as a memory cell of a phase-change memory (PCM). Current passing through a circuit including the memory cell to be programmed is mirrored in a scaled or unscaled manner, and provided as an input to the replica circuit. The replica circuit represents voltage drops that should be encountered when programming the memory cell. An input voltage is also provided to the replica circuit, which affects the voltage drop within the replica circuit that represents the voltage drop of the cell. The voltage drop across the replica circuit can then be mirrored and provided to bias the circuit including the memory cell.Type: ApplicationFiled: February 26, 2016Publication date: June 23, 2016Inventors: Umberto Di Vincenzo, Simone Lombardo
-
Patent number: 9336875Abstract: Memory systems and memory programming methods are described. In one arrangement, a memory system includes a memory cell configured to have a plurality of different memory states, an access circuit coupled with the memory cell and configured to provide a first signal to a memory element of the memory cell to program the memory cell from a first memory state to a second memory state, and a current source coupled with the memory cell and configured to generate a second signal which is provided to the memory element of the memory cell after the first signal to complete programming of the memory cell from the first memory state to the second memory state.Type: GrantFiled: December 16, 2013Date of Patent: May 10, 2016Assignee: Micron Technology, Inc.Inventors: Richard E. Fackenthal, Simone Lombardo
-
Patent number: 9281061Abstract: Apparatus and methods utilize a replica circuit to generate a voltage for programming of a memory cell, such as a memory cell of a phase-change memory (PCM). Current passing through a circuit including the memory cell to be programmed is mirrored in a scaled or unscaled manner, and provided as an input to the replica circuit. The replica circuit represents voltage drops that should be encountered when programming the memory cell. An input voltage is also provided to the replica circuit, which affects the voltage drop within the replica circuit that represents the voltage drop of the cell. The voltage drop across the replica circuit can then be mirrored and provided to bias the circuit including the memory cell.Type: GrantFiled: March 13, 2013Date of Patent: March 8, 2016Assignee: MICRON TECHNOLOGY, INC.Inventors: Umberto Di Vincenzo, Simone Lombardo
-
Publication number: 20150267798Abstract: A spur differential gear, including a planet carrier having a rim gear carrier with a plurality of radially inward protruding segments circumferentially displaced from each other creating windows therebetween, and first and second hubs fixedly secured to opposite axial sides of the plurality of segments, wherein the components of the rim gear carrier are non-rotatably connected to each other, first and second output gears, a revolving planet arrangement contradirectionally rotatably coupling the first and second output gears via a plurality of circumferentially displaced planet pairs, each planet pair including first and second revolving planets configured to rotate around their own planet axes, wherein the first and second revolving planets revolve with the planet carrier around the axis of rotation and are rotatable opposite it around the first and second planet axes, respectively, wherein one of the plurality of planet pairs is accommodated in each of the plurality of window segments.Type: ApplicationFiled: November 11, 2013Publication date: September 24, 2015Inventors: Thorsten Biermann, Harald Martini, Inaki Fernandez, Simone Lombardo, Franz Kurth
-
Publication number: 20150170740Abstract: Memory systems and memory programming methods are described. In one arrangement, a memory system includes a memory cell configured to have a plurality of different memory states, an access circuit coupled with the memory cell and configured to provide a first signal to a memory element of the memory cell to program the memory cell from a first memory state to a second memory state, and a current source coupled with the memory cell and configured to generate a second signal which is provided to the memory element of the memory cell after the first signal to complete programming of the memory cell from the first memory state to the second memory state.Type: ApplicationFiled: December 16, 2013Publication date: June 18, 2015Applicant: Micron Technology, Inc.Inventors: Richard E. Fackenthal, Simone Lombardo
-
Publication number: 20140078822Abstract: Apparatus and methods utilize a replica circuit to generate a voltage for programming of a memory cell, such as a memory cell of a phase-change memory (PCM). Current passing through a circuit including the memory cell to be programmed is mirrored in a scaled or unscaled manner, and provided as an input to the replica circuit. The replica circuit represents voltage drops that should be encountered when programming the memory cell. An input voltage is also provided to the replica circuit, which affects the voltage drop within the replica circuit that represents the voltage drop of the cell. The voltage drop across the replica circuit can then be mirrored and provided to bias the circuit including the memory cell.Type: ApplicationFiled: March 13, 2013Publication date: March 20, 2014Applicant: Micron Technology, Inc.Inventors: Umberto Di Vincenzo, Simone Lombardo