Abstract: Embodiments of the invention are directed to a system, method, or computer program product for an approach to predictive structuring of electronic data. The system uses data mining and data clustering techniques using classification models to organize feature column groups comprising feature columns. The system identifies and flags feature column groups and/or feature columns based on regulatory data standards provided by regulatory bodies. Thereafter, data objects are imported into the system and prediction algorithms are implemented to characterize the feature columns containing the data objects.

Abstract: Disclosed herein are devices and method for realizing field-free deterministic switching of a perpendicularly polarized magnet using SOTs in a quantum material with low-symmetry crystal structure. In preferred embodiments, SOT devices are fabricated using a perpendicularly polarized van der Waals (vdW) based layered quantum material platform and thin films of WTe2 are used as a spin-source material for generating the SOTs for magnetic memory and spin logic devices.

Abstract: Embodiments of the invention are directed to a system, method, or computer program product for an approach to predictive structuring of electronic data. The system uses data mining and data clustering techniques using classification models to organize feature column groups comprising feature columns. The system identifies and flags feature column groups and/or feature columns based on regulatory data standards provided by regulatory bodies. Thereafter, data objects are imported into the system and prediction algorithms are implemented to characterize the feature columns containing the data objects.

Abstract: A spintronic device is disclosed. The spintronic device includes a spin current transport layer, a spin injector, and a spin detector. The spin injector includes a first tunnel barrier layer made of strontium oxide (SrO) disposed over the spin current transport layer and a first magnetic material layer disposed over the first tunnel barrier layer. The spin detector includes a second tunnel barrier layer made of SrO disposed over the spin current transport layer. A second magnetic material layer is disposed over the second tunnel barrier layer and a spin sensor has a sensor input terminal coupled to the second magnetic material layer.