Abstract: The present invention relates to a carbon nanotube preparation method and system, which may improve the overall efficiency and economic feasibility of a reaction by collecting fine particles including carbon nanotube particles that have not grown enough and an unreacted catalyst produced during and after the reaction by using a separator at the exterior of a fluidized bed reactor, and then, injecting the fine particles as a bed prior to a subsequent cycle.

Abstract: A manufacturing method of a grain-oriented electrical steel sheet according to an embodiment of the present invention includes: manufacturing a cold-rolled sheet; forming a groove in the cold-rolled sheet; removing an Fe—O oxide formed on a surface of the cold-rolled sheet; primary recrystallization annealing the cold-rolled sheet; and applying an annealing separating agent to the primary recrystallized cold-rolled sheet, and secondary recrystallization annealing it, wherein a close contacting property coefficient calculated by Formula 1 below is 0.016 to 1.13. close contacting property coefficient (Sad)=(0.8×R)/Hhill-up??[Formula 1] (In Formula 1, R represents the average roughness (?m) of the surface of the cold-rolled sheet after the removing of the oxide, and Hhill-up represents the average height (?m) of the hill-up present on the surface of the cold-rolled sheet after the removing of the oxide.).

Abstract: Proposed is an electrochemical reaction device that generates products by subjecting a mixed solution inside a reactor to an electrochemical reaction using an electrode part. More particularly, proposed is an electrochemical reaction device that can increase the yield of products produced by an electrochemical reaction inside a reactor and prevent an explosion caused by residual gas during maintenance.

Abstract: A manufacturing method of a grain-oriented electrical steel sheet according to an embodiment of the present invention, includes: manufacturing a cold-rolled sheet; forming a groove by irradiating a laser beam on the cold-rolled sheet; and partially removing an oxide layer formed on a surface of the cold-rolled sheet so that a thickness of the oxide layer remains at 1 to 5 nm, wherein the grain-oriented electrical steel sheet has islands of 0.25 or less having sphericity of 0.5 to 0.9 under the oxide layer under the groove.

Abstract: A sidestream smoke removing device includes a housing has a smoking space defined therein, an article inserting part is positioned on one end of the housing and having an open area through which a smoking article is inserted into the smoking space, a sidestream smoke processing part positioned at a distance from an upstream end of the smoking article inserted into the smoking space and configured to process sidestream smoke produced from the smoking article, and an article detection part positioned in the article inserting part to be adjacent to the smoking article so as to detect the smoking article inserted into the article inserting part. The smoking article includes low flammability coating portions within a cigarette paper surrounding the smoking material. The article detection part may be configured to detect the low flammability coating portions of the smoking article.

Abstract: The present invention relates to a system for diagnosis and management of indoor air quality, and more particularly to a system for diagnosis and management of indoor air quality which is capable of obtaining and analyzing air quality data by measuring the indoor air quality of a vehicle or accommodation space and of detecting smoking or non-smoking, the type of smoking, and an abnormal situation by diagnosing at least one of indoor smoking and smoking types. In addition, the present invention relates to a technology for facilitating the management of accommodation by efficiently diagnosing indoor air quality.

Abstract: In the present invention, only low-growth carbon nanotubes are selectively separated among solid particles discharged during a reaction and then re-input to a reactor, so that it is possible to improve the quality of a carbon nanotube product to be produced and the productivity of a carbon nanotube production process.

Abstract: The present invention relates to entangled-type carbon nanotubes which have a bulk density of 31 kg/m3 to 85 kg/m3 and a ratio of tapped bulk density to bulk density of 1.37 to 2.05, and a method for preparing the entangled-type carbon nanotubes.

Abstract: The present invention relates to a method for preparing a catalyst which can produce carbon nanotubes having a higher bulk density by supporting a catalyst component under pressurized conditions, and to a method for producing carbon nanotubes using the catalyst so produced.

Abstract: The present invention relates to a system for diagnosis and management of indoor air quality, and more particularly to a system for diagnosis and management of indoor air quality which is capable of obtaining and analyzing air quality data by measuring the indoor air quality of a vehicle or accommodation space and of detecting smoking or non-smoking, the type of smoking, and an abnormal situation by diagnosing at least one of indoor smoking and smoking types. In addition, the present invention relates to a technology for facilitating the management of accommodation by efficiently diagnosing indoor air quality.

Abstract: An apparatus for predicting performance of a wheel in a vehicle: includes a learning device that generates a latent space for a plurality of two-dimensional (2D) wheel images based on a convolutional autoencoder (CAE), extracts a predetermined number of the plurality of 2D wheel images from the latent space, and learns a dataset having the plurality of 2D wheel images and performance values corresponding to the plurality of 2D wheel images; and a controller that predicts performance for the plurality of 2D wheel images based on a performance prediction model obtained by the learning device.

Abstract: The present invention relates to electric bicycle speed control device and method. According to the present invention, a torque of a motor for driving a wheel is controlled so that a speed of a pedal driven by a user follows a speed of the wheel, and a torque of the pedal is also controlled by applying an assist level according to the torque of the motor. Therefore, even in an electric bicycle with a chain, it is possible to feel a feeling of the pedal like a bicycle with a chain, and it is possible to adjust the force applied to the pedal according to the assist level.

Abstract: A semiconductor device includes first and second active patterns respectively on the first and second active regions of a substrate, a gate electrode on the first and second channel patterns, active contacts electrically connected to at least one of the first and second source/drain patterns, a gate contact electrically connected to the gate electrode, a first metal layer on the active and gate contacts and including a first and second power line, and first and second gate cutting patterns below the first and second power lines. The first active pattern may include first channel pattern between a pair of first source/drain patterns. The second active pattern may include a second channel pattern between a pair of second source/drain patterns. The first and second gate cutting patterns may cover the outermost side surfaces of the first and second channel patterns, respectively.

Abstract: Disclosed is a filter replacement device which can replace a filter in a radioactivated structure. The filter replacement device comprises: a body; an articulated manipulator provided at one side of the body and having five degrees of freedom; a tool detachably provided at the end of the manipulator so as to perform all operations for replacing a filter in a target object; and a socket detachably provided on the tool.

Abstract: The present invention relates to entangled-type carbon nanotubes which have a bulk density of 31 kg/m3 to 85 kg/m3 and a ratio of tapped bulk density to bulk density of 1.37 to 2.05, and a method for preparing the entangled-type carbon nanotubes.

Abstract: A semiconductor device includes first and second active patterns respectively on the first and second active regions of a substrate, a gate electrode on the first and second channel patterns, active contacts electrically connected to at least one of the first and second source/drain patterns, a gate contact electrically connected to the gate electrode, a first metal layer on the active and gate contacts and including a first and second power line, and first and second gate cutting patterns below the first and second power lines. The first active pattern may include first channel pattern between a pair of first source/drain patterns. The second active pattern may include a second channel pattern between a pair of second source/drain patterns. The first and second gate cutting patterns may cover the outermost side surfaces of the first and second channel patterns, respectively.

Abstract: A method for analyzing a wafer map using a wafer map analyzer includes generating first wafer maps each displaying characteristics of a first wafer for a corresponding channel of a plurality of channels. The first wafer maps are auto-encoded together to extract a first feature. The method also includes determining whether the first feature is a valid pattern, classifying the type of the first feature based on unsupervised learning when the first feature is a valid pattern and extracting a representative image of features classified into the same type as the first feature.

Abstract: The present invention relates to a nozzle for cleaning a substrate by discharging cleaning liquid to the substrate and a method of manufacturing the nozzle and, more particularly, to a nozzle for cleaning a substrate and a method of manufacturing the nozzle, the nozzle having pressure resistance performance capable of enduring high supply pressure of the cleaning liquid.

Abstract: A semiconductor memory device includes a substrate including a cell area and a peripheral area defined by a periphery of the cell area, the cell area including a dummy cell area and a normal cell area, and an active area defined by a cell element isolation film. The device includes a cell area separation film defining the cell area in the substrate, the dummy cell area defining a boundary with the cell area separation film between the normal cell area and the cell area separation film. The device includes a normal bit-line on the normal cell area and extending in a first direction, a dummy bit-line group on the dummy cell area, the dummy bit-line group including a plurality of dummy bit-lines extending in the first direction, and a plurality of storage contacts connected to the active area and located along a second direction perpendicular to the first direction.

Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern and including semiconductor patterns vertically stacked and spaced apart from each other, a source/drain pattern connected to the semiconductor patterns, a gate electrode on the semiconductor patterns and extending in a first direction, and a gate insulating layer between the semiconductor patterns and the gate electrode. A first semiconductor pattern of the semiconductor patterns includes opposite side surfaces in the first direction, and bottom and top surfaces. The gate insulating layer covers the opposite side surfaces, and the bottom and top surfaces and includes a first region on one of the opposite side surfaces of the first semiconductor pattern and a second region on one of the top or bottom surfaces of the first semiconductor pattern, and a thickness of the first region may be greater than a thickness of the second region.