Abstract: The present disclosure provides a method for fabricating an image sensor. The method includes the following operations. A cavity is formed at a first surface of a substrate. A germanium layer is formed in the cavity. A first heavily doped region is formed in the germanium layer by an implantation operation. A second heavily doped region is formed at a position proximal to a top surface of the germanium layer, wherein the second heavily doped region is laterally surrounded by the first heavily doped region from a top view perspective. An interconnect structure is formed over the germanium layer.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

Abstract: Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: Provided are a system and a method of treating wastewater. The system includes a wastewater chamber, positive and negative electrode chambers, acid and basic solution chambers and a buffer chamber. The wastewater chamber receives wastewater containing a first ion. The positive and the negative electrode chambers are respectively on opposite sides of the wastewater chamber. The acid chamber is between the wastewater chamber and the positive electrode chamber. The basic chamber is between the wastewater chamber and the negative electrode chamber. The buffer chamber is between one of the acid and the basic chambers and the wastewater chamber, and receives the buffer solution containing the first ion. The interfaces between the wastewater chamber and the buffer chamber and between the one of the acid and the basic chambers and the buffer chamber are ion exchange membranes having the same electrical properties.

Abstract: Provided are a system for treating wastewater and a cleaning method thereof. The wastewater treatment system includes: a wastewater compartment, a first electrode, a second electrode, an acid compartment, a base compartment, an acid supply apparatus, a base supply apparatus, a control apparatus, and a power supply device. During the cleaning process, the power supply device provides reverse potential to the first and the second electrodes. The control apparatus shut off a first channel so that the acid supply apparatus provides an acid solution to the base compartment through a second channel, and shut off a third channel so that the base supply apparatus provides an alkaline solution to the acid compartment through a fourth channel, without shutting off the wastewater treatment system.

Abstract: Provided are a system and a method of treating wastewater. The system includes a wastewater chamber, positive and negative electrode chambers, acid and basic solution chambers and a buffer chamber. The wastewater chamber receives wastewater containing a first ion. The positive and the negative electrode chambers are respectively on opposite sides of the wastewater chamber. The acid chamber is between the wastewater chamber and the positive electrode chamber. The basic chamber is between the wastewater chamber and the negative electrode chamber. The buffer chamber is between one of the acid and the basic chambers and the wastewater chamber, and receives the buffer solution containing the first ion. The interfaces between the wastewater chamber and the buffer chamber and between the one of the acid and the basic chambers and the buffer chamber are ion exchange membranes having the same electrical properties.

Abstract: Provided are a system and a method of treating wastewater. The system includes a forward osmosis (FO) liquid concentration apparatus and an electrodialysis (ED) apparatus. The FO liquid concentration apparatus increases the concentration of the salt in the wastewater to between 7% and 14%. The ED apparatus is disposed downstream of the FO liquid concentration apparatus and coupled to the FO liquid concentration apparatus to receive the wastewater introduced by the FO liquid concentration apparatus, and make the salt in the wastewater into an acid solution and a basic solution.