Patents by Inventor Sin-Yi Yang

Sin-Yi Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor Device and Methods of Manufacture
    Publication number: 20190148553
    Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a first contact is formed to a source/drain region and a dielectric layer is formed over the first contact. An opening is formed to expose the first contact, and the opening is lined with a dielectric material. A second contact is formed in electrical contact with the first contact through the dielectric material.
    Type: Application
    Filed: December 18, 2018
    Publication date: May 16, 2019
    Inventors: Che-Cheng Chang, Kai-Yu Cheng, Chih-Han Lin, Sin-Yi Yang, Horng-Huei Tseng
  • Semiconductor device and methods of manufacture
    Patent number: 10164111
    Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a first contact is formed to a source/drain region and a dielectric layer is formed over the first contact. An opening is formed to expose the first contact, and the opening is lined with a dielectric material. A second contact is formed in electrical contact with the first contact through the dielectric material.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Che-Cheng Chang, Kai-Yu Cheng, Chih-Han Lin, Sin-Yi Yang, Horng-Huei Tseng
  • Semiconductor Device and Methods of Manufacture
    Publication number: 20180040733
    Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a first contact is formed to a source/drain region and a dielectric layer is formed over the first contact. An opening is formed to expose the first contact, and the opening is lined with a dielectric material. A second contact is formed in electrical contact with the first contact through the dielectric material.
    Type: Application
    Filed: December 29, 2016
    Publication date: February 8, 2018
    Inventors: Che-Cheng Chang, Kai-Yu Cheng, Chih-Han Lin, Sin-Yi Yang, Horng-Huei Tseng