Patents by Inventor Sing-Chung Hu

Sing-Chung Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210399093
    Abstract: A pixel-array substrate includes a semiconductor substrate with a pixel array, a back surface, and a front surface, and a guard ring formed of a doped semiconductor, enclosing the pixel array, and extending into the semiconductor substrate from the front surface, the back surface forming a trench extending into the semiconductor substrate, the trench overlapping the guard ring. A method for reducing leakage current into a pixel-array includes doping a semiconductor substrate to form a guard ring that extends into the semiconductor substrate from a front surface, encloses a pixel array, excludes a periphery region, and resists a flow of electric current, and forming, into a back surface of the semiconductor substrate, a trench that penetrates into the back surface and overlaps the guard ring, the guard ring and the trench configured to resist the flow of electric current between the pixel array and the periphery region.
    Type: Application
    Filed: June 18, 2020
    Publication date: December 23, 2021
    Inventors: Yuanwei ZHENG, Sing-Chung HU, Gang CHEN, Dyson TAI, Lindsay GRANT
  • Publication number: 20210305298
    Abstract: Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode. At least three substrate trench structures are formed in the semiconductor substrate, defining two nonplanar structures, each having a plurality of sidewall portions. An isolation layer includes at least three isolation layer trench structures, each being disposed in a respective one of the three substrate trench structures. A gate includes three fingers, each being disposed in a respective one of the three isolation layer trench structures. An electron channel of the transistor extends along the plurality of sidewall portions of the two nonplanar structures in a channel width plane.
    Type: Application
    Filed: March 25, 2020
    Publication date: September 30, 2021
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Sing-Chung Hu, Seong Yeol Mun, Bill Phan
  • Publication number: 20210305299
    Abstract: Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode. The transistor includes a nonplanar structure disposed in the semiconductor substrate, which is bounded by two outer trench structures formed in the semiconductor substrate. Isolation deposits are disposed within the two outer trench structures formed in the semiconductor substrate. A gate includes a planar gate and two fingers extending into one of two inner trench structures formed in the semiconductor substrate between the nonplanar structure and a respective one of the two outer trench structures. This structure creates an electron channel extending along a plurality of sidewall portions of the nonplanar structure in a channel width plane.
    Type: Application
    Filed: March 25, 2020
    Publication date: September 30, 2021
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Chiao-Ti Huang, Sing-Chung Hu, Yuanwei Zheng
  • Publication number: 20210111212
    Abstract: Image sensors include a pixel die that is stacked on a logic die. The logic die includes at least one function logic element disposed on a bond side thereof, and a logic oxide array of raised logic oxide features also disposed on the bond side. The pixel die includes a pixel array disposed on a light receiving side thereof, and a pixel oxide array of raised pixel oxide features disposed on a bond side of the pixel die. A plurality of outer bonds is disposed between an outer region of the logic die and an outer region of the pixel die. A plurality of inner bonds is formed at an inner region of the image sensor between the pixel oxide array and the logic oxide array, the inner bonds being spaced apart by a plurality of fluidly connected air gaps that extend between the logic die and the pixel die.
    Type: Application
    Filed: October 9, 2019
    Publication date: April 15, 2021
    Inventor: Sing-Chung Hu
  • Patent number: 10964738
    Abstract: An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: March 30, 2021
    Assignee: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Yuanwei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson Tai, Lindsay Grant, Eric Webster, Sing-Chung Hu
  • Publication number: 20200105807
    Abstract: An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.
    Type: Application
    Filed: October 2, 2018
    Publication date: April 2, 2020
    Inventors: Gang Chen, Yuanwei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson Tai, Lindsay Grant, Eric Webster, Sing-Chung Hu
  • Patent number: 10079261
    Abstract: An image sensor includes a plurality of photodiodes and a floating diffusion disposed in a semiconductor material. The image sensor also includes a plurality of transfer gates coupled between the plurality of photodiodes and the floating diffusion to transfer the image charge generated in the plurality of photodiodes into the floating diffusion. Peripheral circuitry is disposed proximate to the plurality of photodiodes and coupled to receive the image charge from the plurality of photodiodes. A shallow trench isolation structure is laterally disposed, at least in part, between the plurality of photodiodes and the peripheral circuitry to prevent electrical crosstalk between the plurality of photodiodes and the peripheral circuitry. The peripheral circuitry includes one or more transistors including a source electrode and a drain electrode that are raised above a surface of the semiconductor material.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: September 18, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Qin Wang, Bill Phan, Sing-Chung Hu, Gang Chen
  • Patent number: 9865642
    Abstract: A front-side-interconnect (FSI) red-green-blue-infrared (RGB-IR) photosensor array has photosensors of a first type with a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; photosensors of a second type, with a deeper diffused N-type region in a P-type well, the P-type well; and photosensors of a third type with a diffused N-type region diffused into the high resistivity semiconductor layer underlying all of the other types of photosensors. In embodiments, photosensors of a fourth type have a diffused N-type region in a P-type well, the N-type region deeper than the N-type region of photosensors of the first and second types.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: January 9, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Zhenhong Fu, Dajiang Yang, Xianmin Yi, Gang Chen, Sing-Chung Hu, Duli Mao
  • Patent number: 9698185
    Abstract: Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.
    Type: Grant
    Filed: October 13, 2011
    Date of Patent: July 4, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Sing-Chung Hu, Hsin-Chih Tai, Duli Mao, Manoj Bikumandla, Wei Zheng, Yin Qian, Zhibin Xiong, Vincent Venezia, Keh-Chiang Ku, Howard E. Rhodes
  • Publication number: 20160358969
    Abstract: A front-side-interconnect (FSI) red-green-blue-infrared (RGB-IR) photosensor array has photosensors of a first type with a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; photosensors of a second type, with a deeper diffused N-type region in a P-type well, the P-type well; and photosensors of a third type with a diffused N-type region diffused into the high resistivity semiconductor layer underlying all of the other types of photosensors. In embodiments, photosensors of a fourth type have a diffused N-type region in a P-type well, the N-type region deeper than the N-type region of photosensors of the first and second types.
    Type: Application
    Filed: June 5, 2015
    Publication date: December 8, 2016
    Inventors: Zhenhong Fu, Dajiang Yang, Xianmin Yi, Gang Chen, Sing-Chung Hu, Duli Mao
  • Patent number: 9496304
    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
    Type: Grant
    Filed: May 5, 2015
    Date of Patent: November 15, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sing-Chung Hu, Rongsheng Yang, Gang Chen, Howard E. Rhodes, Sohei Manabe, Dyson H. Tai
  • Patent number: 9419044
    Abstract: A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.
    Type: Grant
    Filed: April 17, 2014
    Date of Patent: August 16, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Dajiang Yang, Gang Chen, Zhenhong Fu, Duli Mao, Eric A. G. Webster, Sing-Chung Hu, Dyson H. Tai
  • Patent number: 9312299
    Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: April 12, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Oray Orkun Cellek, Dajiang Yang, Sing-Chung Hu, Philip John Cizdziel, Dyson Tai, Gang Chen, Cunyu Yang, Zhiqiang Lin
  • Patent number: 9287308
    Abstract: An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled are coupled to the pixel circuitry from the one or more photodiodes.
    Type: Grant
    Filed: April 8, 2013
    Date of Patent: March 15, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sing-Chung Hu, Dajiang Yang, Oray Orkun Cellek, Hsin-Chih Tai, Gang Chen
  • Publication number: 20150303235
    Abstract: A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.
    Type: Application
    Filed: April 17, 2014
    Publication date: October 22, 2015
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Dajiang Yang, Gang Chen, Zhenhong Fu, Duli Mao, Eric A. G. Webster, Sing-Chung Hu, Dyson H. Tai
  • Publication number: 20150295007
    Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.
    Type: Application
    Filed: April 10, 2014
    Publication date: October 15, 2015
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Oray Orkun Cellek, Dajiang Yang, Sing-Chung Hu, Philip John Cizdziel, Dyson Tai, Gang Chen, Cunyu Yang, Zhiqiang Lin
  • Publication number: 20150236058
    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
    Type: Application
    Filed: May 5, 2015
    Publication date: August 20, 2015
    Inventors: Sing-Chung Hu, Rongsheng Yang, Gang Chen, Howard E. Rhodes, Sohei Manabe, Dyson H. Tai
  • Patent number: 9054007
    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure lined with a dielectric layer inside the DTI structure is disposed in the semiconductor material isolates the first region on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. Doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: June 9, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sing-Chung Hu, Rongsheng Yang, Gang Chen, Howard E. Rhodes, Sohei Manabe, Hsin-Chih Tai
  • Patent number: 8969775
    Abstract: A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: March 3, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Zhiqiang Lin, Sing-Chung Hu, Duli Mao, Hsin-Chih Tai
  • Publication number: 20150048427
    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure lined with a dielectric layer inside the DTI structure is disposed in the semiconductor material isolates the first region on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. Doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
    Type: Application
    Filed: August 15, 2013
    Publication date: February 19, 2015
    Applicant: Omnivision Technologies, Inc.
    Inventors: Sing-Chung Hu, Rongsheng Yang, Gang Chen, Howard E. Rhodes, Sohei Manabe, Hsin-Chih Tai