Abstract: A method for fabricating a mask for patterning a radiation sensitive layer in a lithographic printer is disclosed. An attenuating (absorptive or reflective) layer is coated over a substantially transparent base substrate such that after processing a two-dimensional spatially varying attenuating pattern is created with a continuously or discretely varying transmission or reflection function. In accordance with the present invention the two-dimensional attenuating pattern is formed by e-beam patterning of radiation sensitive layer to create a three-dimensional surface relief pattern. This pattern is transferred to the attenuating layer by an anisotropic etch, typically a directional reactive plasma etch. The attenuation of this radiation absorbing or reflecting layer varies with layer thickness. In one embodiment of this invention the attenuation of the mask would vary spatially in a continuous manner.

Abstract: Multilayer film stacks and gray scale processing methods are employed for fabricating phase-shifting masks (PSMs) utilized in lithography. Desired optical transmission and phase-shifting functions of the mask are achieved by controlling the optical properties and thickness of constituent film layers. The mask can be tuned for optimal performance at various wavelengths to an extent beyond that obtainable using a single layer film to control both attenuation and phase shifting of incident light. The processing methods exploit multi-level electron beam or optical beam lithography techniques, and the etch selectivity afforded by selection of appropriate materials for the film stack, to obtain improved yields and reduced processing costs for fabrication of PSMs. In particular, diamond-like carbon (DLC) materials formed by ion beam deposition and having a stress of 1 GPa or less are utilized as etch stop layers.

Abstract: A method for fabricating a mask for patterning a radiation sensitive layer in a lithographic printer is disclosed. An attenuating (absorptive or reflective) layer is coated over a substantially transparent base substrate such that after processing a two-dimensional spatially varying attenuating pattern is created with a continuously or discretely varying transmission or reflection function. In accordance with the present invention the two-dimensional attenuating pattern is formed by e-beam patterning of radiation sensitive layer to create a three-dimensional surface relief pattern. This pattern is transferred to the attenuating layer by an anisotropic etch, typically a directional reactive plasma etch. The attenuation of this radiation absorbing or reflecting layer varies with layer thickness. In one embodiment of this invention the attenuation of the mask would vary spatially in a continuous manner.

Abstract: A method for producing micro-elements, such as micro-lenses and computer generated holograms using a gray scale mask formed of a high energy beam sensitive glass plate which may be darkened by direct writing of an electron beam to record a gray scale pattern corresponding to a predetermined depth level to be etched into a photoresist coated substrate. The high energy beam sensitive glass may have a base glass composition which is provided with an ion exchanged surface layer containing a high concentration of silver ions. High energy beam sensitive glass plates are exposed to various electron beam charge densities at relatively low acceleration voltages and over relatively small grid spacings to provide a wide range of gray levels. Photoresist coated substrates are exposed through the gray scale mask and subsequently etched by chemically assisted ion beam milling to produce high efficiency micro-lenses and similar micro-elements having high surface resolution.

Abstract: A system and method are disclosed for producing electro-optic components with transparent, ferroelectric PLZT (perovskite) film characteristics, without lead diffusion. In particular, the fabrication of PLZT-on-sapphire electro-optic components for devices such as spatial light modulators, integrated infrared detectors, and optoelectronic integrated circuits is disclosed, permitting integration of such devices with semiconductor devices having the same substrate, such as silicon-on-sapphire circuits. The system comprises a PLZT film deposition apparatus, a silicon dioxide deposition apparatus, an annealing apparatus, and an optional plasma etching apparatus. During film deposition, material from a PLZT target (source) of suitable (9/65/35) composition is deposited on the substrate and is epitaxially grown on the R-plane (1102) of the substrate, forming a non-ferroelectric, pyrochloric film. The substrate and film are then placed in a silicon dioxide (SiO.sub.2) deposition chamber where SiO.sub.

Abstract: The contrast produced from a photographic transparency is controlled by placing the transparency between a pair of partially reflecting mirrors forming walls of an optical cavity. Mirrors are used to trap a collimated laser beam illuminating the transparency so that at least a portion of the beam energy is passed through the transparency plural times. The distance that the light beam travels between the mirrors is controlled as a function of the wavelength of the beam energy to control the phase of light interference in the beam passing through the transparency, thereby controlling the intensity of the beam derived from the mirror downstream of the transparency. The contrast of the transparency is increased or decreased, depending upon whether constructive or destructive interference for the beam energy is provided by the mirror spacing. For a negative input transparency a low to high contrast projected negative or positive image can be obtained.