Patents by Inventor Sing-Mo H. Tzeng

Sing-Mo H. Tzeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming air gaps for advanced interconnect systems
    Patent number: 6037249
    Abstract: A process for forming air gaps in an interconnect system is disclosed. At least two conductive lines are formed upon a substrate. A low-dielectric constant material (LDCM) is formed between the at least two conductive lines. Formation of the LDCM creates first and second adhesive forces between the LDCM and the at least two conductive lines and between the LDCM and the substrate, respectively. The LDCM is expanded. A dielectric layer is formed onto the LDCM and the at least two conductive lines. Formation of the dielectric layer creates a third adhesive force between the LDCM and the dielectric layer. The LDCM is contracted. Contraction of the LDCM resulting from a fourth force within the LDCM. Each of the first, second, and third adhesive forces are substantially stronger than the fourth force.
    Type: Grant
    Filed: December 31, 1997
    Date of Patent: March 14, 2000
    Assignee: Intel Corporation
    Inventors: Chien Chiang, David B. Fraser, Vicky Ochoa, Chuanbin Pan, Sing-Mo H. Tzeng