Patents by Inventor Sinichi Suzuki
Sinichi Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6894334Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel sType: GrantFiled: March 3, 2003Date of Patent: May 17, 2005Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Jun Sugiura, Osamu Tsuchiya, Makoto Ogasawara, Fumio Ootsuka, Kazuyoshi Torii, Isamu Asano, Nobuo Owada, Mitsuaki Horiuchi, Tsuyoshi Tamaru, Hideo Aoki, Nobuhiro Otsuka, Seiichirou Shirai, Masakazu Sagawa, Yoshihiro Ikeda, Masatoshi Tsuneoka, Toru Kaga, Tomotsugu Shimmyo, Hidetsugu Ogishi, Osamu Kasahara, Hiromichi Enami, Atsushi Wakahara, Hiroyuki Akimori, Sinichi Suzuki, Keisuke Funatsu, Yoshinao Kawasaki, Tunehiko Tubone, Takayoshi Kogano, Ken Tsugane
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Publication number: 20030189255Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel sType: ApplicationFiled: March 3, 2003Publication date: October 9, 2003Inventors: Jun Sugiura, Osamu Tsuchiya, Makoto Ogasawara, Fumio Ootsuka, Kazuyoshi Torii, Isamu Asano, Nobuo Owada, Mitsuaki Horiuchi, Tsuyoshi Tamaru, Hideo Aoki, Nobuhiro Otsuka, Seiichirou Shirai, Masakazu Sagawa, Yoshihiro Ikeda, Masatoshi Tsuneoka, Toru Kaga, Tomotsugu Shimmyo, Hidetsugu Ogishi, Osamu Kasahara, Hiromichi Enami, Atsushi Wakahara, Hiroyuki Akimori, Sinichi Suzuki, Keisuke Funatsu, Yoshinao Kawasaki, Tunehiko Tubone, Takayoshi Kogano, Ken Tsugane
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Patent number: 6548847Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel sType: GrantFiled: July 9, 2001Date of Patent: April 15, 2003Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Jun Sugiura, Osamu Tsuchiya, Makoto Ogasawara, Fumio Ootsuka, Kazuyoshi Torii, Isamu Asano, Nobuo Owada, Mitsuaki Horiuchi, Tsuyoshi Tamaru, Hideo Aoki, Nobuhiro Otsuka, Seiichirou Shirai, Masakazu Sagawa, Yoshihiro Ikeda, Masatoshi Tsuneoka, Toru Kaga, Tomotsugu Shimmyo, Hidetsugu Ogishi, Osamu Kasahara, Hiromichi Enami, Atsushi Wakahara, Hiroyuki Akimori, Sinichi Suzuki, Keisuke Funatsu, Yoshinao Kawasaki, Tunehiko Tubone, Takayoshi Kogano, Ken Tsugane
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Publication number: 20020017669Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel sType: ApplicationFiled: July 9, 2001Publication date: February 14, 2002Inventors: Jun Sugiura, Osamu Tsuchiya, Makoto Ogasawara, Fumio Ootsuka, Kazuyoshi Torii, Isamu Asano, Nobuo Owada, Mitsuaki Horiuchi, Tsuyoshi Tamaru, Hideo Aoki, Nobuhiro Otsuka, Seiichirou Shirai, Masakazu Sagawa, Yoshihiro Ikeda, Masatoshi Tsuneoka, Toru Kaga, Tomotsugu Shimmyo, Hidetsugu Ogishi, Osamu Kasahara, Hiromichi Enami, Atsushi Wakahara, Hiroyuki Akimori, Sinichi Suzuki, Keisuke Funatsu, Yoshinao Kawasaki, Tunehiko Tubone, Takayoshi Kogano, Ken Tsugane
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Patent number: 6342412Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel sType: GrantFiled: December 14, 1999Date of Patent: January 29, 2002Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Jun Sugiura, Osamu Tsuchiya, Makoto Ogasawara, Fumio Ootsuka, Kazuyoshi Torii, Isamu Asano, Nobuo Owada, Mitsuaki Horiuchi, Tsuyoshi Tamaru, Hideo Aoki, Nobuhiro Otsuka, Seiichirou Shirai, Masakazu Sagawa, Yoshihiro Ikeda, Masatoshi Tsuneoka, Toru Kaga, Tomotsugu Shimmyo, Hidetsugu Ogishi, Osamu Kasahara, Hiromichi Enami, Atsushi Wakahara, Hiroyuki Akimori, Sinichi Suzuki, Keisuke Funatsu, Yoshinao Kawasaki, Tunehiko Tubone, Takayoshi Kogano, Ken Tsugane
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Patent number: 6169324Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel sType: GrantFiled: October 6, 1999Date of Patent: January 2, 2001Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Jun Sugiura, Osamu Tsuchiya, Makoto Ogasawara, Fumio Ootsuka, Kazuyoshi Torii, Isamu Asano, Nobuo Owada, Mitsuaki Horiuchi, Tsuyoshi Tamaru, Hideo Aoki, Nobuhiro Otsuka, Seiichirou Shirai, Masakazu Sagawa, Yoshihiro Ikeda, Masatoshi Tsuneoka, Toru Kaga, Tomotsugu Shimmyo, Hidetsugu Ogishi, Osamu Kasahara, Hiromichi Enami, Atsushi Wakahara, Hiroyuki Akimori, Sinichi Suzuki, Keisuke Funatsu, Yoshinao Kawasaki, Tunehiko Tubone, Takayoshi Kogano, Ken Tsugane
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Patent number: 6127255Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions. The disclosed process includes forming insulating films over wiring lines including uppermost wiring lines, the uppermost wiring lines having gaps between adjacent uppermost wiring lines. The insulating films include forming a silicon oxide film over the wiring lines and in the gaps between adjacent uppermost wiring lines, and forming a silicon nitride film over the silicon oxide film, the silicon nitride film being formed by plasma chemical vapor deposition. The silicon oxide film is formed to have a thickness of at least one-half of the gap between adjacent uppermost wiring lines, with the silicon nitride film being thicker than the silicon oxide film.Type: GrantFiled: October 3, 1997Date of Patent: October 3, 2000Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Jun Sugiura, Osamu Tsuchiya, Makoto Ogasawara, Fumio Ootsuka, Kazuyoshi Torii, Isamu Asano, Nobuo Owada, Mitsuaki Horiuchi, Tsuyoshi Tamaru, Hideo Aoki, Nobuhiro Otsuka, Seiichirou Shirai, Masakazu Sagawa, Yoshihiro Ikeda, Masatoshi Tsuneoka, Toru Kaga, Tomotsugu Shimmyo, Hidetsugu Ogishi, Osamu Kasahara, Hiromichi Enami, Atsushi Wakahara, Hiroyuki Akimori, Sinichi Suzuki, Keisuke Funatsu, Yoshinao Kawasaki, Tunehiko Tubone, Takayoshi Kogano, Ken Tsugane
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Patent number: 5811316Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel sType: GrantFiled: June 5, 1995Date of Patent: September 22, 1998Assignees: Hitachi. Ltd., Hitachi VLSI Engineering CorporationInventors: Jun Sugiura, Osamu Tsuchiya, Makoto Ogasawara, Fumio Ootsuka, Kazuyoshi Torii, Isamu Asano, Nobuo Owada, Mitsuaki Horiuchi, Tsuyoshi Tamaru, Hideo Aoki, Nobuhiro Otsuka, Seiichirou Shirai, Masakazu Sagawa, Yoshihiro Ikeda, Masatoshi Tsuneoka, Toru Kaga, Tomotsugu Shimmyo, Hidetsugu Ogishi, Osamu Kasahara, Hiromichi Enami, Atsushi Wakahara, Hiroyuki Akimori, Sinichi Suzuki, Keisuke Funatsu, Yoshinao Kawasaki, Tunehiko Tubone, Takayoshi Kogano, Ken Tsugane
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Patent number: 5780882Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel sType: GrantFiled: June 1, 1995Date of Patent: July 14, 1998Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Jun Sugiura, Osamu Tsuchiya, Makoto Ogasawara, Fumio Ootsuka, Kazuyoshi Torii, Isamu Asano, Nobuo Owada, Mitsuaki Horiuchi, Tsuyoshi Tamaru, Hideo Aoki, Nobuhiro Otsuka, Seiichirou Shirai, Masakazu Sagawa, Yoshihiro Ikeda, Masatoshi Tsuneoka, Toru Kaga, Tomotsugu Shimmyo, Hidetsugu Ogishi, Osamu Kasahara, Hiromichi Enami, Atsushi Wakahara, Hiroyuki Akimori, Sinichi Suzuki, Keisuke Funatsu, Yoshinao Kawasaki, Tunehiko Tubone, Takayoshi Kogano, Ken Tsugane
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Patent number: 5739589Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel sType: GrantFiled: June 3, 1996Date of Patent: April 14, 1998Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Jun Sugiura, Osamu Tsuchiya, Makoto Ogasawara, Fumio Ootsuka, Kazuyoshi Torii, Isamu Asano, Nobuo Owada, Mitsuaki Horiuchi, Tsuyoshi Tamaru, Hideo Aoki, Nobuhiro Otsuka, Seiichirou Shirai, Masakazu Sagawa, Yoshihiro Ikeda, Masatoshi Tsuneoka, Toru Kaga, Tomotsugu Shimmyo, Hidetsugu Ogishi, Osamu Kasahara, Hiromichi Enami, Atsushi Wakahara, Hiroyuki Akimori, Sinichi Suzuki, Keisuke Funatsu, Yoshinao Kawasaki, Tunehiko Tubone, Takayoshi Kogano, Ken Tsugane
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Patent number: 5557147Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel sType: GrantFiled: April 19, 1994Date of Patent: September 17, 1996Assignees: Hitachi, Ltd., Hitachi ULSI Engineering CorporationInventors: Jun Sugiura, Osamu Tsuchiya, Makoto Ogasawara, Fumio Ootsuka, Kazuyoshi Torii, Isamu Asano, Nobuo Owada, Mitsuaki Horiuchi, Tsuyoshi Tamaru, Hideo Aoki, Nobuhiro Otsuka, Seiichirou Shirai, Masakazu Sagawa, Yoshihiro Ikeda, Masatoshi Tsuneoka, Toru Kaga, Tomotsugu Shimmyo, Hidetsugu Ogishi, Osamu Kasahara, Hiromichi Enami, Atsushi Wakahara, Hiroyuki Akimori, Sinichi Suzuki, Keisuke Funatsu, Yoshinao Kawasaki, Tunehiko Tubone, Takayoshi Kogano, Ken Tsugane
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Patent number: 5468989Abstract: There is provided a semiconductor integrated circuit device having bipolar transistors each composed of an emitter region, base region, and collector region arranged vertically on a semiconductor substrate, said collector region having a plane figure, with the square corners thereof cut off. To be concrete, the buried collector region having a high concentration of impurity has its square corners cut off and the base region formed on the major surface of the epitaxial layer formed on said buried collector region has also its square corners cut off. The bipolar transistor having such a plane figure has a reduced parasitic capacity and an increased operating speed. A manufacturing method is also provided capable of producing a highly reliable groove isolation structure with a low dielectric constant.Type: GrantFiled: October 20, 1992Date of Patent: November 21, 1995Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Hirotaka Nishizawa, Seiichiro Azuma, Kazuaki Ootoshi, Masataka Miyama, Shuji Kawata, Osamu Kasahara, Sinichi Suzuki
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Patent number: 5331191Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel sType: GrantFiled: September 30, 1992Date of Patent: July 19, 1994Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Jun Sugiura, Osamu Tsuchiya, Makoto Ogasawara, Fumio Ootsuka, Kazuyoshi Torii, Isamu Asano, Nobuo Owada, Mitsuaki Horiuchi, Tsuyoshi Tamaru, Hideo Aoki, Nobuhiro Otsuka, Seiichirou Shirai, Masakazu Sagawa, Yoshihiro Ikeda, Masatoshi Tsuneoka, Toru Kaga, Tomotsugu Shimmyo, Hidetsugu Ogishi, Osamu Kasahara, Hiromichi Enami, Atsushi Wakahara, Hiroyuki Akimori, Sinichi Suzuki, Keisuke Funatsu, Yoshinao Kawasaki, Tunehiko Tubone, Takayoshi Kogano, Ken Tsugane
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Patent number: 5202275Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel sType: GrantFiled: March 20, 1990Date of Patent: April 13, 1993Assignees: Hitachi Ltd., Hitachi VLSI Engineering Corp.Inventors: Jun Sugiura, Osamu Tsuchiya, Makoto Ogasawara, Fumio Ootsuka, Kazuyoshi Torii, Isamu Asano, Nobuo Owada, Mitsuaki Horiuchi, Tsuyoshi Tamaru, Hideo Aoki, Nobuhiro Otsuka, Seiichirou Shirai, Masakazu Sagawa, Yoshihiro Ikeda, Masatoshi Tsuneoka, Toru Kaga, Tomotsugu Shimmyo, Hidetsugu Ogishi, Osamu Kasahara, Hiromichi Enami, Atsushi Wakahara, Hiroyuki Akimori, Sinichi Suzuki, Keisuke Funatsu, Yoshinao Kawasaki, Tunehiko Tubone, Takayoshi Kogano, Ken Tsugane