Patents by Inventor Sinja Verena Klenk
Sinja Verena Klenk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11655262Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.Type: GrantFiled: March 31, 2022Date of Patent: May 23, 2023Inventors: David Dominique Schweinfurth, Lukas Mayr, Sinja Verena Klenk, Sabine Weiguny, Charles Hartger Winter, Kyle Blakeney, Nilanka Weerathunga Sirikkathuge, Tharindu Malawara Arachchige Nimanthaka Karunaratne
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Publication number: 20230046318Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR2, PR2, OR, SR, CR2, SiR2, X is H, R? or NR?2, wherein at least one X is H, n is 1 or 2, and R and R? is an alkyl group, an alkenyl group, an aryl group, or a silyl group.Type: ApplicationFiled: November 16, 2020Publication date: February 16, 2023Inventors: Sinja Verena KLENK, Alexander Georg HUFNNAGEL, Hagen WILMER, Daniel LĂ–FFLER, Sabine WEIGUNY, Kerstin SCHIERLE-ARNDT, Charles Hartger WINTER, Nilanka WEERATHUNGA SIRIKKATHUGE
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Patent number: 11505562Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.Type: GrantFiled: November 9, 2018Date of Patent: November 22, 2022Assignees: BASF SE, Wayne State UniversityInventors: Lukas Mayr, David Dominique Schweinfurth, Daniel Waldmann, Charles Hartger Winter, Kyle Blakeney, Sinja Verena Klenk, Sabine Weiguny, Nilanka Weerathunga Sirikkathuge, Tharindu Malawara Arachchige Nimanthaka Karunaratne
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Patent number: 11505865Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with compound of general formula (II), (III), or (IV), wherein E is Ge or Sn, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, R? are an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is nothing, hydrogen, a halide, an alkyl group, an alkylene group, an aryl group, an alkoxy group, an aryl oxy group, an amino group, or a amidinate group, or an guanidinate group, L is an alkyl group, an alkenyl group, an aryl group, or a silyl group.Type: GrantFiled: July 4, 2019Date of Patent: November 22, 2022Assignee: BASF SEInventors: David Dominique Schweinfurth, Lukas Mayr, Sinja Verena Klenk, David Scheschkewitz, Kinga Izabela Leszczynska
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Publication number: 20220298637Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), or (III) in the gaseous state (I) (II) (III) wherein A is NR, NR2, PR, PR2, O, OR, S, or SR, E is N, NR, P, PR, O or S, n is 1, 2, or 3, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, and A, E, and n are chosen such that the compound of general formula (I), (II), or (III) is electronically neutral.Type: ApplicationFiled: May 27, 2020Publication date: September 22, 2022Inventors: Sinja Verena KLENK, David Dominique SCHWEINFURTH, Lukas MAYR, Sabine WEIGUNY, Charles Winter, Nilanka WEERATHUNGA SIRIKKATHUGE, Tharindu KARUNARATNE
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Publication number: 20220298638Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), (III), (IV), (V), (VI), or (VII) in the gaseous state (I) (II) (III) (IV) . . . (V) (VI) (VII) wherein A is NR or O, E is CR?, CNR?2, N, PR?2, or SOR?, G is CR? or N, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R? and R? are hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.Type: ApplicationFiled: May 27, 2020Publication date: September 22, 2022Inventors: Sinja Verena KLENK, David Dominique SCHWEINFURTH, Lukas MAYR, Sabine WEIGUNY, Charles WINTER, Nilanka WEERATHUNGA SIRIKKATHUGE
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Publication number: 20220220131Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.Type: ApplicationFiled: March 31, 2022Publication date: July 14, 2022Inventors: David Dominique Schweinfurth, Lukas Mayr, Sinja Verena Klenk, Sabine Weiguny, Charles Hartger Winter, Kyle Blakeney, Nilanka Weerathunga Sirikkathuge, Tharindu Malawara Arachchige Nimanthaka Karunaratne
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Patent number: 11319332Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.Type: GrantFiled: September 17, 2018Date of Patent: May 3, 2022Assignees: BASF SE, Wayne State UniversityInventors: David Dominique Schweinfurth, Lukas Mayr, Sinja Verena Klenk, Sabine Weiguny, Charles Hartger Winter, Kyle Blakeney, Nilanka Weerathunga Sirikkathuge, Tharindu Malawara Arachchige Nimanthaka Karunaratne
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Publication number: 20210324516Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with compound of general formula (II), (III), or (IV), wherein E is Ge or Sn, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, R? are an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is nothing, hydrogen, a halide, an alkyl group, an alkylene group, an aryl group, an alkoxy group, an aryl oxy group, an amino group, or a amidinate group, or an guanidinate group, L is an alkyl group, an alkenyl group, an aryl group, or a silyl group.Type: ApplicationFiled: July 4, 2019Publication date: October 21, 2021Inventors: David Dominique SCHWEINFURTH, Lukas MAYR, Sinja Verena KLENK, David SCHESCHKEWITZ, Kinga Izabela LESZCZYNSKA
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Publication number: 20210262091Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. The present invention relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semi-metal-containing compound in contact with a compound of general formula (Ia), (Ib), (Ic), (Id) or (Ie), wherein E is Ti, Zr, Hf, V, Nb, or Ta, L1 and L2 is a pentadienyl or a cyclopentadienyl ligand, and X1 and X2 is nothing or a neutral ligand, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R20, R21, R22, R23, R24, R25, and R26 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein for compound (Ia), at least one of R1 to R10 contains at least one carbon and/or silicon atom and A is an alkyl group, an alkenyl group, an aryl group or a silyl group.Type: ApplicationFiled: June 4, 2019Publication date: August 26, 2021Inventors: David Dominique SCHWEINFURTH, Sabine WEIGUNY, Lukas MAYR, Sinja Verena KLENK
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Publication number: 20210079025Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.Type: ApplicationFiled: November 9, 2018Publication date: March 18, 2021Inventors: Lukas Mayr, David Dominique Schweinfurth, Daniel Waldmann, Charles Hartger Winter, Kyle Blakeney, Sinja Verena Klenk, Sabine Weiguny, Nilanka Weerathunga Sirikkathuge, Tharindu Malawara Arachchige Nimanthaka Karunaratne
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Publication number: 20210079520Abstract: Described herein is a process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.Type: ApplicationFiled: September 17, 2018Publication date: March 18, 2021Applicant: Wayne State UniversityInventors: David Dominique Schweinfurth, Lukas Mayr, Sinja Verena Klenk, Sabine Weiguny, Charles Hartger Winter, Kyle Blakeney, Nilanka Weerathunga Sirikkathuge, Tharindu Malawara Arachchige Nimanthaka Karunaratne