Abstract: An ultra-small and slim semiconductor acceleration sensor with high sensitivity is provided. The acceleration sensor has a mass portion formed at a center part of a silicon semiconductor substrate, a frame formed on an edge part of the substrate, thin elastic support arms which are provided on top surfaces of the mass portion and the frame and connect the mass portion and the frame, and strain gauges constituted by a plurality of pairs of piezoresistors formed on top surfaces of the elastic support arms. A distance between a pair of Z-axis strain gauges provided on the top surface of the elastic support arm is made longer by 0.4L to 1.2L or shorter by 1.0L to 1.8L than a distance between a pair of X-axis strain gauges, whereby output of the Z-axis strain gauge is made at the same level as output of the X-axis strain gauge.