Patents by Inventor Sinn-Wen Chen

Sinn-Wen Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11588136
    Abstract: A manufacturing method of an organic light-emitting diode is provided in the present disclosure. The manufacturing method of the organic light-emitting diode includes steps as follows. A substrate is provided and a layered structure forming step is performed. In the layered structure forming step, an anode layer, a scattering layer, an emissive layer and a cathode layer are sequentially formed on the substrate, so as to obtain an organic light-emitting diode. A material of the scattering layer is a quasicrystalline material.
    Type: Grant
    Filed: March 23, 2021
    Date of Patent: February 21, 2023
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Sinn-Wen Chen, Anbalagan Ramakrishnan, Sudam Chavhan, Kiran Kishore Kesavan, Mangey Ram Nagar, Jwo-Huei Jou
  • Publication number: 20220173357
    Abstract: A manufacturing method of an organic light-emitting diode is provided in the present disclosure. The manufacturing method of the organic light-emitting diode includes steps as follows. A substrate is provided and a layered structure forming step is performed. In the layered structure forming step, an anode layer, a scattering layer, an emissive layer and a cathode layer are sequentially formed on the substrate, so as to obtain an organic light-emitting diode. A material of the scattering layer is a quasicrystalline material.
    Type: Application
    Filed: March 23, 2021
    Publication date: June 2, 2022
    Inventors: Sinn-Wen CHEN, Anbalagan RAMAKRISHNAN, Sudam CHAVHAN, Kiran Kishore KESAVAN, Mangey Ram NAGAR, Jwo-Huei JOU
  • Patent number: 8398897
    Abstract: Thermoelectric material has attracted more attentions as a promising energy material in recent years. Research nowadays are devoted to improvement of figure-of-merit (zT=S2T/??). Motivated by p-type AgSbTe2 compound, ternary Ag—Sb—Te has been reported as an important thermoelectric system. Although ternary AgSbTe2 compound has been considered as a candidate for thermoelectric materials with the advantages of low thermal conductivity (?p=0.6 WK?1 m?1), the relatively high electrical resistivity (?=7.5*10?3 ?cm) has limited its applications. This invention disclosed brand-new Ag—Sb—Te bulk materials with very fine microstructures that nanoscale Ag2Te phase precipitate uniformly in the multi-phase matrix through class I reaction, liquid=Ag2Te+AgSbTe2+?. Moreover, the electrical resistivity (?) measured by four-probe method is as low as 8.4*10?4 (?cm) at room temperature, which guarantees the promise of those ternary bulk materials.
    Type: Grant
    Filed: April 1, 2011
    Date of Patent: March 19, 2013
    Assignee: National Tsing Hua University
    Inventors: Sinn-Wen Chen, Sin-Jie Wu
  • Patent number: 8278140
    Abstract: A method for preparing IGZO particles and a method for preparing an IGZO thin film by using the IGZO particles are disclosed. The method for preparing the IGZO particles comprises the following steps: (A) providing a solution of metal acid salts, which contains a zinc salt, an indium salt, and a gallium salt; (B) mixing the solution of the metal acid salts with a basic solution to obtain an oxide precursor; and (C) heating the oxide precursor to obtain IGZO particles.
    Type: Grant
    Filed: December 1, 2009
    Date of Patent: October 2, 2012
    Assignee: National Tsing Hua University
    Inventors: Ya-Hui Yang, Sueli Sidney Yang, Chen-Yu Kao, Kan-San Chou, Sinn-Wen Chen
  • Publication number: 20120119164
    Abstract: Thermoelectric material has attracted more attentions as a promising energy material in recent years. Research nowadays are devoted to improvement of figure-of-merit (zT=S2T/??). Motivated by p-type AgSbTe2 compound, ternary Ag—Sb—Te has been reported as an important thermoelectric system. Although ternary AgSbTe2 compound has been considered as a candidate for thermoelectric materials with the advantages of low thermal conductivity (?p=0.6 WK?1 m?1), the relatively high electrical resistivity (?=7.5*10?3 ?cm) has limited its applications. This invention disclosed brand-new Ag—Sb—Te bulk materials with very fine microstructures that nanoscale Ag2Te phase precipitate uniformly in the multi-phase matrix through class I reaction, liquid=Ag2Te+AgSbTe2+?. Moreover, the electrical resistivity (?) measured by four-probe method is as low as 8.4*10?4 (?cm) at room temperature, which guarantees the promise of those ternary bulk materials.
    Type: Application
    Filed: April 1, 2011
    Publication date: May 17, 2012
    Applicant: NATIONAL TSING HUA UNIVERSITY
    Inventors: Sinn-Wen CHEN, Sin-Jie WU
  • Publication number: 20110110813
    Abstract: A new kind of Sn—In based Pb-free solders with Zn addition is disclosed, which includes: 15˜25 wt % In; 0.05˜1.5 wt % Zn; and balance Sn. When the solder of the present invention is used in the assembly of electrical products, the dissolution rates of the substrates and the growth of the intermetallic compounds formed at the interfaces can be reduced; and thereby the properties of joints can be improved.
    Type: Application
    Filed: January 13, 2010
    Publication date: May 12, 2011
    Applicant: National Tsing Hua University
    Inventors: Sinn-Wen Chen, Ching-Feng Yang
  • Patent number: 7704073
    Abstract: This invention provides orthodontic archwires with more than one colors, which can be prepared by subjecting the orthodontic archwires to an anodizing treatment.
    Type: Grant
    Filed: May 8, 2006
    Date of Patent: April 27, 2010
    Assignee: National Tsing Hua University
    Inventors: Sinn-Wen Chen, Chiao-Ling Yang, Jee-Wei Emily Chen
  • Publication number: 20090186313
    Abstract: Metallic devices are frequently used in dental treatments, such as orthodontic archwires, rackets, or dental mini-screws. This invention provides metallic dental devices with a color of tooth or close to tooth, and their preparation methods.
    Type: Application
    Filed: December 19, 2008
    Publication date: July 23, 2009
    Applicants: National Tsing Hua University, Chang-Gung Memorial Hospital
    Inventors: Sinn-Wen Chen, Hsin-Jay Wu, Li-Ling Huang, Eric Jein-Wein Liou
  • Publication number: 20080074643
    Abstract: This invention takes advantages of color characteristics of medical devices for the cosmetic and indication purposes. For example, the appearances of the metallic brackets used in orthodontics are improved with colors other than the original metallic color by surface treatment using plasma techniques. For example, orthodontic brackets are made with piezochromic materials. When the archwire's torsion and bending forces are fading due to the movement of the teeth, the color of the pressure sensitive brackets will be changed, and the need of archwire's readjustment to have proper torsion and bending forces is signalized. For example, rehabilitation equipments are made with piezochromic materials. When the pressures exerting on the rehabilitation equipments are different, different colors of the equipments are displayed, and the therapists can then act accordingly.
    Type: Application
    Filed: September 17, 2007
    Publication date: March 27, 2008
    Applicant: National Tsing Hua University
    Inventors: Sinn-Wen Chen, Feng-Ling Chen, An-Ren Zi, Jee-Jay Chen
  • Publication number: 20070262121
    Abstract: A method for soldering an electronic component to a substrate is provided. The method includes the steps of forming a metal layer on the substrate; applying a solder material on the metal layer; and performing a thermal process to transfer the solder material into a solder joint so as to connect the electronic component with the substrate. During the thermal process, a portion of the metal layer is introduced into the solder joint, thereby elevating the eutectoid temperature of the solder joint. This invention also provides an electronic device made by this method.
    Type: Application
    Filed: May 8, 2007
    Publication date: November 15, 2007
    Inventors: Sinn-Wen Chen, Chao-Hong Wang, Po-Yin Chen, Zhien-Chi Chen
  • Patent number: 7261856
    Abstract: This invention takes advantage of the characteristics that the effective charge numbers of different metals have different values and even with different signs, and alloys are prepared with the metals of different signs of effective charge numbers. The effective charge numbers of the alloys are the summation of the mole fraction of each constituent metal times its respective effective charge number. Based on the knowledge of the calculated effective charge number, alloys are prepared with proper selection of constituent metals and proper ratios. When the alloy is under the influence of an electric field, the atoms, with the tendency to move in the same direction of the electron flow, interact with the atoms, with the tendency to move in the opposite. The alloys are thus electromigration effect-free or electromigration effect-insignificant.
    Type: Grant
    Filed: September 9, 2003
    Date of Patent: August 28, 2007
    Assignee: National Tsing Hua University
    Inventor: Sinn-Wen Chen
  • Publication number: 20060199139
    Abstract: This invention provides orthodontic archwires with more than one colors, which can be prepared by subjecting the orthodontic archwires to an anodizing treatment.
    Type: Application
    Filed: May 8, 2006
    Publication date: September 7, 2006
    Applicant: National Tsing Hua University
    Inventors: Sinn-Wen Chen, Chiao-Ling Yang, Jee-Wei Chen
  • Publication number: 20050269385
    Abstract: This invention forms an indium or indium alloy layer on top of a Sn based lead-free solder. The indium or indium alloy layer can be formed by various methods, such as plating, deposition, printing, dipping, etc. The indium-containing layer melts during the soldering process, wets the substrate, and forms a sound solder joint. Since the melting point of indium is 156.6° C., even lower than that of the eutectic Sn—Pb which is at 183° C., so the soldering process can be carried out at a temperature lower than the conventional soldering process. During the soldering process, the indium reacts with the Sn based Pb-free solder alloy. Since the eutectic temperature of Sn—In is at 120° C., during the short time of the soldering process, the surface of the In deposited Pb-free solder remains as the liquid phase and have a good wetting with the substrate, while a In gradient is formed in the In deposited Pb-free solder.
    Type: Application
    Filed: June 3, 2004
    Publication date: December 8, 2005
    Applicant: National Tsing Hua University
    Inventors: Sinn-Wen Chen, Shih-Kang Lin, Ching-Feng Yang, Yu-Chih Huang, Ting-Ying Chung, Ying-Mei Tsai, An-Ren Zi
  • Publication number: 20050214709
    Abstract: This invention provides metallic archwires or dental crowns with various colors, which can be prepared by subjecting the orthodontic archwires or metallic dental crowns to an anodizing treatment.
    Type: Application
    Filed: March 29, 2004
    Publication date: September 29, 2005
    Applicant: National Tsing Hua University
    Inventors: Sinn-Wen Chen, Chiao-Ling Yang
  • Publication number: 20040208776
    Abstract: This invention takes advantage of the characteristics that the effective charge numbers of different metals have different values and even with different signs, and alloys are prepared with the metals of different signs of effective charge numbers. The effective charge numbers of the alloys are the summation of the mole fraction of each constituent metal times its respective effective charge number. Based on the knowledge of the calculated effective charge number, alloys are prepared with proper selection of constituent metals and proper ratios. When the alloy is under the influence of an electric field, the atoms, with the tendency to move in the same direction of the electron flow, interact with the atoms, with the tendency to move in the opposite. The alloys are thus electromigration effect-free or electromigration effect-insignificant.
    Type: Application
    Filed: September 9, 2003
    Publication date: October 21, 2004
    Applicant: National Tsing Hua University
    Inventor: Sinn-Wen Chen