Patents by Inventor Sinya Nunoue

Sinya Nunoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7781958
    Abstract: A light emitting device includes a light emitting element emitting an excitation light and a fluorescent element. The fluorescent element includes a semi-translucent film facing the light emitting element, and transmits the excitation light; a first luminescent film including phosphors to absorb the excitation light transmitted through the semi-translucent film and to emit a visible light having a different wavelength than the excitation light; and a reflection film disposed on an opposite side of the first luminescent film on which the semi-translucent film is disposed, reflecting the excitation light transmitted through the first luminescent film towards the first luminescent film.
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: August 24, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasushi Hattori, Shinji Saito, Sinya Nunoue, Genichi Hatakoshi, Koichi Tachibana, Naomi Shida, Iwao Mitsuishi
  • Publication number: 20080237616
    Abstract: A semiconductor light emitting device, includes an active layer radiating a light having a predetermined wavelength; a first semiconductor layer of a first conductivity type, provided on the active layer. A semiconductor substrate has a first principal surface in contact with the active layer, a second principal surface facing the first principal surface, and side surfaces connected to the second principal surface. Each of the side surfaces has a bevel angle in a range from about 45 degrees to less than 90 degrees with respect to the second principal surface. A second semiconductor layer of a second conductivity type is provided under the active layer. A first electrode is provided under the second semiconductor layer. A distance between the active layer and the first electrode depends on the wavelength and a refractive index of the second semiconductor layer.
    Type: Application
    Filed: October 24, 2007
    Publication date: October 2, 2008
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Genichi Hatakoshi, Shinji Saito, Yasushi Hattori, Sinya Nunoue
  • Publication number: 20080169752
    Abstract: A light emitting device includes a light emitting element emitting an excitation light and a fluorescent element. The fluorescent element includes a semi-translucent film facing the light emitting element, and transmits the excitation light; a first luminescent film including phosphors to absorb the excitation light transmitted through the semi-translucent film and to emit a visible light having a different wavelength than the excitation light; and a reflection film disposed on an opposite side of the first luminescent film on which the semi-translucent film is disposed, reflecting the excitation light transmitted through the first luminescent film towards the first luminescent film.
    Type: Application
    Filed: September 18, 2007
    Publication date: July 17, 2008
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yasushi HATTORI, Shinji SAITO, Sinya NUNOUE, Genichi HATAKOSHI, Koichi TACHIBANA, Naomi SHIDA, Iwao MITSUISHI