Abstract: A radioisotope production apparatus comprising an electron source arranged to provide an electron beam. The electron source comprises an electron injector and an electron accelerator. The radioisotope production apparatus further comprises a target support structure configured to hold a target and a beam splitter arranged to direct the a first portion of the electron beam along a first path towards a first side of the target and to direct a second portion of the electron beam along a second path towards a second side of the target.

Abstract: A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector (10) and an electron accelerator (20). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target (30) and a beam splitter (40) arranged to direct the a first portion of the electron beam along a first path towards a first side of the target (30) and to direct a second portion of the electron beam along a second path towards a second side of the target (30).

Abstract: In a method of determining an edge roughness parameter of a periodic structure, the periodic structure is illuminated (602) in an inspection apparatus. The illumination radiation beam may comprise radiation with a wavelength in the range 1 nm to 100 nm. A scattering signal (604) is obtained from a radiation beam scattered from the periodic structure. The scattering signal comprises a scattering intensity signal that is obtained by detecting an image of a far-field diffraction pattern in the inspection apparatus. An edge roughness parameter, such as Lined Edge Roughness and/or Line Width Roughness is determined (606) based on a distribution of the scattering intensity signal around a non-specular diffraction order. This may be done for example using a peak broadening model.

Abstract: A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector (10) and an electron accelerator (20). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target (30) and a beam splitter (40) arranged to direct the a first portion of the electron beam along a first path towards a first side of the target (30) and to direct a second portion of the electron beam along a second path towards a second side of the target (30).

Abstract: In a method of determining an edge roughness parameter of a periodic structure, the periodic structure is illuminated (602) in an inspection apparatus. The illumination radiation beam may comprise radiation with a wavelength in the range 1 nm to 100 nm. A scattering signal (604) is obtained from a radiation beam scattered from the periodic structure. The scattering signal comprises a scattering intensity signal that is obtained by detecting an image of a far-field diffraction pattern in the inspection apparatus. An edge roughness parameter, such as Lined Edge Roughness and/or Line Width Roughness is determined (606) based on a distribution of the scattering intensity signal around a non-specular diffraction order. This may be done for example using a peak broadening model.

Abstract: A radiation detector comprises an electrode structure, a planarising layer being disposed over the electrode structure and a protective stack which covers the planarising layer. The planarising layer evens out substantial differences between levels of the electrode structure above the substrate on which the electrode structure is disposed. Consequently, cracks, weak spots and other defects in the protective stack are to a large extent avoided. Because the planarising layer covers essentially the entire electrode structure, practically all sources of defects, notably cracks, in the protective stack are avoided.

Abstract: A display device includes a first substrate provided with first picture electrodes having reflecting parts a second transparent substrate provided with transparent second picture electrodes, with pixels at areas of overlapping parts of the first and second picture electrodes, an electro-optic material between the first and second substrates and a color filter present on the first substrate, wherein viewed transversely to the first substrate, within a pixel, the color filter partly covers the reflecting part of the first picture electrode. By such a configuration, light from an uncovered part of a picture electrode is mixed with light from the part of the electrode that is covered by the color filter to increase the intensity of the display.

Abstract: By partly covering the reflective parts of the electrodes in a transflective display with color filters, the color point is adjusted (and the TV curves).

Abstract: A display device includes a first substrate provided with first picture electrodes having reflecting parts a second transparent substrate provided with transparent second picture electrodes, with pixels at areas of overlapping parts of the first and second picture electrodes, an electro-optic material between the first and second substrates and a color filter present on the first substrate, wherein viewed transversely to the first substrate, within a pixel, the color filter partly covers the reflecting part of the first picture electrode. By such a configuration, light from an uncovered part of a picture electrode is mixed with light from the part of the electrode that is covered by the color filter to increase the intensity of the display.

Abstract: By partly covering the reflective parts of the electrodes in a transflective display with color filters, the color point is adjusted (and the TV curves).