Patents by Inventor Siquan WU

Siquan WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Mask plate
    Patent number: 11086214
    Abstract: A mask plate is provided according to the present disclosure. The mask plate includes: a fully-transparent region; a fully-opaque region; and a partially-transparent region at a boundary between the fully-transparent region and the fully-opaque region.
    Type: Grant
    Filed: September 11, 2017
    Date of Patent: August 10, 2021
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Siquan Wu, Xinjie Zhang, Hao Chen
  • MASK PLATE
    Publication number: 20200264504
    Abstract: A mask plate is provided according to the present disclosure. The mask plate includes: a fully-transparent region; a fully-opaque region; and a partially-transparent region at a boundary between the fully-transparent region and the fully-opaque region.
    Type: Application
    Filed: September 11, 2017
    Publication date: August 20, 2020
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Siquan WU, Xinjie ZHANG, Hao CHEN
  • Thin film transistor, GOA circuit, display substrate and display device
    Patent number: 10644120
    Abstract: A thin film transistor is disclosed, comprising a first, second and third electrode. The first and second electrodes are arranged in a same layer and insulated from each other. The third electrode is arranged below and insulated from the first and second electrodes. The first electrode comprises at least one first conducting part. The second electrode comprises second conducting parts, each of which is arranged adjacent with each first conducting part. The third electrode is provided with an opening part at least partially overlapping with the first or second conducting part. If the first or second conducting part is subject to a channel defect due to short circuit, the first or second conducting part is cut off at an overlapping position with the opening part, to repair the channel defect without affecting the third electrode. A GOA circuit, a display substrate and a display device are further disclosed.
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: May 5, 2020
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Wei He, Xinjie Zhang, Wenlong Xiao, Siquan Wu
  • THIN FILM TRANSISTOR, GOA CIRCUIT, DISPLAY SUBSTRATE AND DISPLAY DEVICE
    Publication number: 20190006477
    Abstract: A thin film transistor is disclosed, comprising a first, second and third electrode. The first and second electrodes are arranged in a same layer and insulated from each other. The third electrode is arranged below and insulated from the first and second electrodes. The first electrode comprises at least one first conducting part. The second electrode comprises second conducting parts, each of which is arranged adjacent with each first conducting part. The third electrode is provided with an opening part at least partially overlapping with the first or second conducting part. If the first or second conducting part is subject to a channel defect due to short circuit, the first or second conducting part is cut off at an overlapping position with the opening part, to repair the channel defect without affecting the third electrode. A GOA circuit, a display substrate and a display device are further disclosed.
    Type: Application
    Filed: April 18, 2017
    Publication date: January 3, 2019
    Inventors: Wei HE, Xinjie ZHANG, Wenlong XIAO, Siquan WU