Abstract: A photoelectric sensor includes: isolation structures in a pixel substrate between photosensitive units and including conductive layers; interconnection structures distributed in the pixel substrate with ends exposed on a second surface, including first interconnection structures in a first lead area and second interconnection structures in a second lead area and electrically connected to the first interconnection structures; a metal grid located on and in contact with the conductive layers on the second surface; a connection layer on the second surface in the first lead area and in contact with the metal grid and the first interconnection structures; and pad layers on the second surface in the lead area. The pad layers include a first pad layer in the second lead area and in contact with ends of the second interconnection structures facing the second surface.

Abstract: Method for forming a semiconductor structure includes: providing a first substrate including a first surface and second surface opposite to each other, where the first substrate includes first ions with a first concentration; forming a first epitaxial layer on the first surface of the first substrate, where the first epitaxial layer includes second ions with a second concentration smaller than the first concentration; forming a second epitaxial layer on the first epitaxial layer and a third epitaxial layer located on the second epitaxial layer, where the second epitaxial layer includes third ions with a third concentration and the third epitaxial layer includes fourth ions with a fourth concentration smaller than the third concentration; and thinning the first substrate from the second surface of the first substrate until the surface of the second epitaxial layer is exposed.

Abstract: The present disclosure relates to a semiconductor structure and a method for forming the semiconductor structure. The semiconductor structure includes: a first wafer, including a first substrate and a first dielectric layer on the first substrate, a pad groove and a pad structure in the pad groove are formed in the first substrate and the first dielectric layer, and the pad groove extends through the first substrate along a direction from the first substrate to the first dielectric layer and extends into a partial thickness of the first dielectric layer; and an isolation ring structure, arranged in the first substrate around the pad groove and extending through the first substrate along the direction from the first substrate to the first dielectric layer.

Abstract: The present disclosure relates to a semiconductor structure and a method for forming the semiconductor structure. The semiconductor structure includes: a first wafer, including a first substrate and a first dielectric layer on the first substrate, a plurality of through-silicon via (TSV) structures in an array arrangement are formed in the first substrate, and the TSV structures extend through the first substrate along a direction from the first substrate to the first dielectric layer and extend into a partial thickness of the first dielectric layer; and an isolation ring structure, arranged in the first substrate around the plurality of TSV structures and extending through the first substrate along the direction from the first substrate to the first dielectric layer.