Abstract: A method for wafer dicing and removing separated integrated circuit (IC) dies from a carrier substrate includes mounting a wafer on a substrate using an adhesive layer, laser scribing the adhesive layer to create defect regions in the adhesive layer, and performing a breaking step to separate the laser-scribed adhesive layer into separated adhesive portions corresponding to the IC dies. For a stealth-dicing (SD) technique, defect regions also are created in the wafer using a laser and the breaking step is an expansion step that simultaneously separates the dies and corresponding portions of adhesive. For a dice-before-grind (DBG) technique, the dies are separated by backside grinding before the breaking step. Efficient adhesive-layer separation is achieved with reduced backside chipping associated with conventional blade dicing.

Abstract: A method for wafer dicing and removing separated integrated circuit (IC) dies from a carrier substrate includes mounting a wafer on a substrate using an adhesive layer, laser scribing the adhesive layer to create defect regions in the adhesive layer, and performing a breaking step to separate the laser-scribed adhesive layer into separated adhesive portions corresponding to the IC dies. For a stealth-dicing (SD) technique, defect regions also are created in the wafer using a laser and the breaking step is an expansion step that simultaneously separates the dies and corresponding portions of adhesive. For a dice-before-grind (DBG) technique, the dies are separated by backside grinding before the breaking step. Efficient adhesive-layer separation is achieved with reduced backside chipping associated with conventional blade dicing.

Abstract: A method of dicing a bowed or warped semiconductor wafer includes cutting along the saw streets in a first direction on a first half of the wafer, where the first direction is parallel to the bowing, cutting along the saw streets in the first direction on a second half of the wafer opposite to the first half, and step-cutting along the saw streets in the second direction, such that all of the dies are separated from each other, and the sides of the die in the bowing direction are flat and the sides of the die perpendicular to the bowing direction are stepped.

Abstract: A method of dicing a bowed or warped semiconductor wafer includes cutting along the saw streets in a first direction on a first half of the wafer, where the first direction is parallel to the bowing, cutting along the saw streets in the first direction on a second half of the wafer opposite to the first half, and step-cutting along the saw streets in the second direction, such that all of the dies are separated from each other, and the sides of the die in the bowing direction are flat and the sides of the die perpendicular to the bowing direction are stepped.