Patents by Inventor Sirish K. Reddy
Sirish K. Reddy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230273516Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.Type: ApplicationFiled: April 10, 2023Publication date: August 31, 2023Inventors: Jeffrey MARKS, George Andrew ANTONELLI, Richard A. GOTTSCHO, Dennis M. HAUSMANN, Adrien LAVOIE, Thomas Joseph KNISLEY, Sirish K. REDDY, Bhadri N. VARADARAJAN, Artur KOLICS
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Publication number: 20230266662Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.Type: ApplicationFiled: April 10, 2023Publication date: August 24, 2023Inventors: Jeffrey MARKS, George Andrew ANTONELLI, Richard A. GOTTSCHO, Dennis M. HAUSMANN, Adrien LAVOIE, Thomas Joseph KNISLEY, Sirish K. REDDY, Bhadri N. VARADARAJAN, Artur KOLICS
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Publication number: 20220075260Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.Type: ApplicationFiled: November 16, 2021Publication date: March 10, 2022Applicant: Lam Research CorporationInventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics
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Patent number: 11209729Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.Type: GrantFiled: November 21, 2019Date of Patent: December 28, 2021Assignee: Lam Research CorporationInventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics
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Patent number: 10831096Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.Type: GrantFiled: November 30, 2018Date of Patent: November 10, 2020Assignee: LAM RESEARCH CORPORATIONInventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics
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Publication number: 20200089104Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.Type: ApplicationFiled: November 21, 2019Publication date: March 19, 2020Applicant: Lam Research CorporationInventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics
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Patent number: 10514598Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.Type: GrantFiled: August 30, 2017Date of Patent: December 24, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics
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Publication number: 20190094685Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.Type: ApplicationFiled: November 30, 2018Publication date: March 28, 2019Inventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics
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Patent number: 10242883Abstract: A method for etching features in an OMOM stack with first layer of silicon oxide, a second layer of a metal containing material over the first layer, a third layer of silicon oxide over the second layer, and a fourth layer of a metal containing material over the third layer is provided. A hardmask is formed over the stack. The hardmask is patterned. The OMOM stack is etched through the hardmask.Type: GrantFiled: June 23, 2017Date of Patent: March 26, 2019Assignee: Lam Research CorporationInventors: Joydeep Guha, Sirish K. Reddy, Kaushik Chattopadhyay, Thomas W. Mountsier, Aaron Eppler, Thorsten Lill, Vahid Vahedi, Harmeet Singh
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Patent number: 10192759Abstract: Methods and apparatuses for multiple patterning using image reversal are provided. The methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash method to fill gaps in a pattern of a semiconductor substrate and eliminating spacer etching steps using a single-etch planarization method. Such methods may be performed for double patterning, multiple patterning, and two dimensional patterning techniques in semiconductor fabrication.Type: GrantFiled: May 9, 2016Date of Patent: January 29, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Nader Shamma, Bart J. van Schravendijk, Sirish K. Reddy, Chunhai Ji
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Publication number: 20180374712Abstract: A method for etching features in an OMOM stack with first layer of silicon oxide, a second layer of a metal containing material over the first layer, a third layer of silicon oxide over the second layer, and a fourth layer of a metal containing material over the third layer is provided. A hardmask is formed over the stack. The hardmask is patterned. The OMOM stack is etched through the hardmask.Type: ApplicationFiled: June 23, 2017Publication date: December 27, 2018Inventors: Joydeep GUHA, Sirish K. REDDY, Kaushik CHATTOPADHYAY, Thomas W. MOUNTSIER, Aaron EPPLER, Thorsten LILL, Vahid VAHEDI, Harmeet SINGH
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Publication number: 20180004083Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.Type: ApplicationFiled: August 30, 2017Publication date: January 4, 2018Inventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics
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Patent number: 9778561Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.Type: GrantFiled: January 30, 2015Date of Patent: October 3, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics
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Patent number: 9659783Abstract: A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The stack is etched through the combination hardmask.Type: GrantFiled: March 27, 2015Date of Patent: May 23, 2017Assignee: Lam Research CorporationInventors: Joydeep Guha, Sirish K. Reddy, Kaushik Chattopadhyay, Thomas W. Mountsier, Aaron Eppler, Thorsten Lill, Vahid Vahedi, Harmeet Singh
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Patent number: 9589799Abstract: Methods of forming high etch selectivity, low stress ashable hard masks using plasma enhanced chemical vapor deposition are provided. In certain embodiments, the methods involve pulsing low frequency radio frequency power while keeping high frequency radio frequency power constant during deposition of the ashable hard mask using a dual radio frequency plasma source. According to various embodiments, the low frequency radio frequency power can be pulsed between non-zero levels or by switching the power on and off. The resulting deposited highly selective ashable hard mask may have decreased stress due to one or more factors including decreased ion and atom impinging on the ashable hard mask and lower levels of hydrogen trapped in the ashable hard mask.Type: GrantFiled: April 8, 2014Date of Patent: March 7, 2017Assignee: Lam Research CorporationInventors: Sirish K. Reddy, Chunhai Ji, Xinyi Chen, Pramod Subramonium
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Publication number: 20160254171Abstract: Methods and apparatuses for multiple patterning using image reversal are provided. The methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash method to fill gaps in a pattern of a semiconductor substrate and eliminating spacer etching steps using a single-etch planarization method. Such methods may be performed for double patterning, multiple patterning, and two dimensional patterning techniques in semiconductor fabrication.Type: ApplicationFiled: May 9, 2016Publication date: September 1, 2016Inventors: Nader Shamma, Bart J. van Schravendijk, Sirish K. Reddy, Chunhai Ji
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Patent number: 9320387Abstract: Provided are methods of forming ashable hard masks (AHMs) with high etch selectivity and low hydrogen content using plasma enhanced chemical vapor deposition. Methods involve exposing a first layer to be etched on a semiconductor substrate to a carbon source and sulfur source, and generating a plasma to deposit a sulfur-doped AHM or amorphous carbon-based film on the first layer.Type: GrantFiled: May 5, 2014Date of Patent: April 26, 2016Assignee: Lam Research CorporationInventors: Sirish K. Reddy, Alice G. Hollister, Thorsten Lill
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Publication number: 20150325435Abstract: Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 ?, such as less than about 5 ? as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.Type: ApplicationFiled: July 17, 2015Publication date: November 12, 2015Inventors: Alice G. Hollister, Sirish K. Reddy, Keith Fox, Mandyam Sriram, Joseph L. Womack
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Publication number: 20150221519Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.Type: ApplicationFiled: January 30, 2015Publication date: August 6, 2015Inventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics
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Publication number: 20150200106Abstract: A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The stack is etched through the combination hardmask.Type: ApplicationFiled: March 27, 2015Publication date: July 16, 2015Inventors: Joydeep GUHA, Sirish K. REDDY, Kaushik CHATTOPADHYAY, Thomas W. MOUNTSIER, Aaron EPPLER, Thorsten LILL, Vahid VAHEDI, Harmeet SINGH