Abstract: A storage device is disclosed herein. The storage device, comprises: a non-volatile memory including control circuitry and an array of memory cells formed using a set of word lines and a set of bit lines; and a reference current generator circuit configured to receive an input voltage from a voltage supply and generate therefrom a plurality of outputs, each output of the plurality of outputs used to generate one or more bias voltages/currents for one or more control signals. The control circuitry is configured to: receive a refresh read operation command; and adapt operation of the reference current generator circuit based on receiving the refresh read operation command. This proposal is also applicable for other test modes, such as SA stress, soft and preprogram, and SA test modes.