Patents by Inventor Siry Milan

Siry Milan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma etching apparatus comprising a nozzle oscillating unit
    Patent number: 10176972
    Abstract: A plasma etching apparatus includes: a vacuum chamber; a rotatable electrostatic chuck table for holding a workpiece in the vacuum chamber; a nozzle for supplying a plasma etching gas to part of the workpiece held on the electrostatic chuck table; a nozzle oscillating unit for oscillating the nozzle in such a manner as to describe a horizontal arcuate locus between a region corresponding to the center of the electrostatic chuck table and a region corresponding to the outer periphery of the electrostatic chuck table; and a control unit that controls the rotation amount of the electrostatic chuck table and the position of the nozzle to thereby position the nozzle into a region corresponding to an arbitrary part of the workpiece held on the electrostatic chuck table.
    Type: Grant
    Filed: May 10, 2016
    Date of Patent: January 8, 2019
    Assignee: DISCO Corporation
    Inventors: Yoshio Watanabe, Siry Milan, Hiroyuki Takahashi, Takeshi Seki
  • Method of processing wafer
    Patent number: 10177004
    Abstract: A method of processing a wafer includes a plasma etching step of supplying an etching gas in a plasma state to the wafer to remove processing strains, debris, or modified layers. The plasma etching step includes turning an etching gas into a plasma state outside of a vacuum chamber which houses the wafer therein and delivering the etching gas in the plasma state into the vacuum chamber through a supply nozzle connected to the vacuum chamber.
    Type: Grant
    Filed: March 15, 2018
    Date of Patent: January 8, 2019
    Assignee: Disco Corporation
    Inventors: Yoshio Watanabe, Siry Milan, Kenji Okazaki, Hiroyuki Takahashi, Yoshiteru Nishida, Satoshi Kumazawa
  • METHOD OF PROCESSING WAFER
    Publication number: 20180269068
    Abstract: A method of processing a wafer includes a plasma etching step of supplying an etching gas in a plasma state to the wafer to remove processing strains, debris, or modified layers. The plasma etching step includes turning an etching gas into a plasma state outside of a vacuum chamber which houses the wafer therein and delivering the etching gas in the plasma state into the vacuum chamber through a supply nozzle connected to the vacuum chamber.
    Type: Application
    Filed: March 15, 2018
    Publication date: September 20, 2018
    Inventors: Yoshio Watanabe, Siry Milan, Kenji Okazaki, Hiroyuki Takahashi, Yoshiteru Nishida, Satoshi Kumazawa
  • PLASMA ETCHING APPARATUS
    Publication number: 20160343544
    Abstract: A plasma etching apparatus includes: a vacuum chamber; a rotatable electrostatic chuck table for holding a workpiece in the vacuum chamber; a nozzle for supplying a plasma etching gas to part of the workpiece held on the electrostatic chuck table; a nozzle oscillating unit for oscillating the nozzle in such a manner as to describe a horizontal arcuate locus between a region corresponding to the center of the electrostatic chuck table and a region corresponding to the outer periphery of the electrostatic chuck table; and a control unit that controls the rotation amount of the electrostatic chuck table and the position of the nozzle to thereby position the nozzle into a region corresponding to an arbitrary part of the workpiece held on the electrostatic chuck table.
    Type: Application
    Filed: May 10, 2016
    Publication date: November 24, 2016
    Inventors: Yoshio Watanabe, Siry Milan, Hiroyuki Takahashi, Takeshi Seki