Patents by Inventor SISHEN XIE

SISHEN XIE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10144647
    Abstract: A method for preparing a carbon nanotube (CNT) film is provided, comprising: providing a growth chamber of CNTs, which includes an inlet end, an outlet end, and a first-level growth cavity and a second-level growth cavity, and the first-level growth cavity and the second-level growth cavity are in fluid communication between the inlet end and the outlet end; making precursor materials, which are used for forming CNTs, react in at least the first-level growth cavity of the growth chamber of CNTs to generate CNTs; and making a carrier gas flow into the growth chamber through the inlet end, and pass through the first-level growth cavity and the second-level growth cavity in sequence, wherein, a radial dimension of the first-level growth cavity in a flowing direction of the carrier gas is smaller than that of the second-level growth cavity at a junction between the first-level growth cavity and the second-level growth cavity, and a bubble blowing process is conducted with the precursor materials under the drive o
    Type: Grant
    Filed: April 22, 2014
    Date of Patent: December 4, 2018
    Assignee: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Weiya Zhou, Qiang Zhang, Yanchun Wang, Sishen Xie
  • Publication number: 20160347616
    Abstract: A method for preparing a carbon nanotube (CNT) film is provided, comprising: providing a growth chamber of CNTs, which includes an inlet end, an outlet end, and a first-level growth cavity and a second-level growth cavity, and the first-level growth cavity and the second-level growth cavity are in fluid communication between the inlet end and the outlet end; making precursor materials, which are used for forming CNTs, react in at least the first-level growth cavity of the growth chamber of CNTs to generate CNTs; and making a carrier gas flow into the growth chamber through the inlet end, and pass through the first-level growth cavity and the second-level growth cavity in sequence, wherein, a radial dimension of the first-level growth cavity in a flowing direction of the carrier gas is smaller than that of the second-level growth cavity at a junction between the first-level growth cavity and the second-level growth cavity, and a bubble blowing process is conducted with the precursor materials under the drive o
    Type: Application
    Filed: April 22, 2014
    Publication date: December 1, 2016
    Inventors: WEIYA ZHOU, QIANG ZHANG, YANCHUN WANG, SISHEN XIE
  • Publication number: 20160115030
    Abstract: A method for preparing a carbon nanotube (CNT) film is provided, comprising: providing a growth chamber of CNTs, which includes an inlet end, an outlet end, and a first-level growth cavity and a second-level growth cavity, and the first-level growth cavity and the second-level growth cavity are in fluid communication between the inlet end and the outlet end; making precursor materials, which are used for forming CNTs, react in at least the first-level growth cavity of the growth chamber of CNTs to generate CNTs; and making a carrier gas flow into the growth chamber through the inlet end, and pass through the first-level growth cavity and the second-level growth cavity in sequence, wherein, a radial dimension of the first-level growth cavity in a flowing direction of the carrier gas is smaller than that of the second-level growth cavity at a junction between the first-level growth cavity and the second-level growth cavity, and a bubble blowing process is conducted with the precursor materials under the drive o
    Type: Application
    Filed: April 22, 2014
    Publication date: April 28, 2016
    Inventors: WEIYA ZHOU, QIANG ZHANG, YANCHUN WANG, SISHEN XIE