Patents by Inventor Siswanto Sutanto

Siswanto Sutanto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Biased Hetch process in deposition-etch-deposition gap fill
    Patent number: 7163896
    Abstract: Biased plasma etch processes incorporating H2 etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.
    Type: Grant
    Filed: December 10, 2003
    Date of Patent: January 16, 2007
    Assignee: Novellus Systems, Inc.
    Inventors: Wenxian Zhu, Jengyi Yu, Siswanto Sutanto, Pingsheng Sun, Jeffrey Chih-Hou Lowe, Waikit Fung, Tze Wing Poon
  • Method for controlling etch process repeatability
    Patent number: 7078312
    Abstract: Plasma etch processes incorporating etch chemistries which include hydrogen. In particular, high density plasma chemical vapor deposition-etch-deposition processes incorporating etch chemistries which include hydrogen that can effectively fill high aspect ratio (typically at least 3:1, for example 6:1, and up to 10:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps while reducing or eliminating chamber loading and redeposition and improving wafer-to-wafer uniformity relative to conventional deposition-etch-deposition processes which do not incorporate hydrogen in their etch chemistries.
    Type: Grant
    Filed: September 2, 2003
    Date of Patent: July 18, 2006
    Assignee: Novellus Systems, Inc.
    Inventors: Siswanto Sutanto, Wenxian Zhu, Waikit Fung, Mayasari Lim, Vishal Gauri, George D. Papasouliotis