Abstract: A chemical vapor deposition process comprising heating a porous metal template at a temperature range of 500 to 2000° C.; and passing a gas mixture comprising a carrier gas carrying along a vapor of an organometallic compound and at least one of a carbon precursor gas and a boron nitride precursor gas through the heated metal template is provided. The heating temperature causes the decomposition of the organometallic compound vapor into metal particles, the carbon precursor gas into graphene domains, and/or the boron nitride precursor gas into hexagonal-boron nitride domains. The graphene domains and/or the hexagonal-boron nitride domains nucleate and grow on the metal particles and the metal template to form a three-dimensional interconnected porous network of graphene and/or the hexagonal-boron nitride. A foam-like structure produced by a process as described above is also provided.

Abstract: The present invention relates to a boron nitride (BN(C)) composite material in the form of a continuous structure, and a phase change material (PCM) included inside said continuous structure of (BN(C)), the method for manufacturing same and the components that comprise same.

Abstract: A method of preparing a boron nitride material, such as boron nitride (BN) or boron carbonitride (BCN), is provided. The method may include providing a substrate, and sublimating an amine borane complex onto the substrate to obtain the boron nitride material. The amine borane complex may include, but is not limited to, borazine, amino borane, trimethylamine borane and triethylamine borane. In addition, the temperature at which the sublimating is carried out may be varied to control composition of the boron nitride material formed. In addition, various morphologies can be obtained by using the present method, namely films, nanotubes and porous foam.

Abstract: According to embodiments of the present invention, a composite material is provided, comprising an interconnected network comprising a material that is thermally conductive and electrically insulative, and a polymer. Preferably, the composite material comprises hexagonal boron nitride network and polyimide. The hexagonal boron nitride network is preferably formed on a template by chemical vapour deposition. The interconnected network is preferably about 0.3 vol % or less of the composite material. According to further embodiments of the present invention, a method of forming a composite material, and an electrical component are also provided. Said composite material may be useful as flexible electrical elements.

Abstract: A chemical vapor deposition process comprising heating a porous metal template at a temperature range of 500 to 2000° C.; and passing a gas mixture comprising a carrier gas carrying along a vapor of an organometallic compound and at least one of a carbon precursor gas and a boron nitride precursor gas through the heated metal template is provided. The heating temperature causes the decomposition of the organometallic compound vapor into metal particles, the carbon precursor gas into graphene domains, and/or the boron nitride precursor gas into hexagonal-boron nitride domains. The graphene domains and/or the hexagonal-boron nitride domains nucleate and grow on the metal particles and the metal template to form a three-dimensional interconnected porous network of graphene and/or the hexagonal-boron nitride. A foam-like structure produced by a process as described above is also provided.

Abstract: A method of preparing a boron nitride material, such as boron nitride (BN) or boron carbonitride (BCN), is provided. The method may include providing a substrate, and sublimating an amine borane complex onto the substrate to obtain the boron nitride material. The amine borane complex may include, but is not limited to, borazine, amino borane, trimethylamine borane and triethylamine borane. In addition, the temperature at which the sublimating is carried out may be varied to control composition of the boron nitride material formed. In addition, various morphologies can be obtained by using the present method, namely films, nanotubes and porous foam.

Abstract: A filtered cathodic vacuum arc apparatus and method for the generation of a nanocluster film or compound film with improved characteristics onto a substrate and thin film materials, carbon-encapsulated metal nanoclusters and carbon nanotubes formed through the use of said apparatus and method. The apparatus includes a deposition chamber, a substrate holder for holding a substrate within the deposition chamber, means for simultaneously generating a first beam of plasma and a second beam of plasma from a first and a second plasma source, respectively, a Y-bend magnetic filter to direct the plasma towards a substrate on the substrate holder and an anti-Helmholtz coil set-up within the deposition chamber, wherein the Y-bend magnetic filter and anti-Helmholtz coil set up cause first and second beams of plasma to mix.