Abstract: A wafer level package, and a semiconductor wafer, electronic system, and a memory module that include one or more of the wafer level packages, and methods of fabricating the die packages on a wafer level, and integrated circuit modules that include one or more packages are provided. In one embodiment, the die package comprises a redistribution layer interconnecting two or more dies disposed on a substrate, typically a semiconductor wafer, the redistribution layer including a first trace connecting a bond pad of each of two dies, and a second trace connecting one of the bond pads of the two dies to a ball pad. The die package of the invention can comprise memory devices such as static random access memories (SRAMs), and can be incorporated into a variety of electronic systems as part of a memory package such as single in line memory modules (SIMMs) or dual in line memory modules.

Abstract: A wafer level package, and a semiconductor wafer, electronic system, and a memory module that include one or more of the wafer level packages, and methods of fabricating the die packages on a wafer level, and integrated circuit modules that include one or more packages are provided. In one embodiment, the die package comprises a redistribution layer interconnecting two or more dies disposed on a substrate, typically a semiconductor wafer, the redistribution layer including a first trace connecting a bond pad of each of two dies, and a second trace connecting one of the bond pads of the two dies to a ball pad. The die package of the invention can comprise memory devices such as static random access memories (SRAMs), and can be incorporated into a variety of electronic systems as part of a memory package such as single in line memory modules (SIMMs) or dual in line memory modules.

Abstract: A wafer level package, and a semiconductor wafer, electronic system, and a memory module that include one or more of the wafer level packages, and methods of fabricating the die packages on a wafer level, and integrated circuit modules that include one or more packages are provided. In one embodiment, the die package comprises a redistribution layer interconnecting two or more dies disposed on a substrate, typically a semiconductor wafer, the redistribution layer including a first trace connecting a bond pad of each of two dies, and a second trace connecting one of the bond pads of the two dies to a ball pad. The die package of the invention can comprise memory devices such as static random access memories (SRAMs), and can be incorporated into a variety of electronic systems as part of a memory package such as single in line memory modules (SIMMs) or dual in line memory modules.

Abstract: A semiconductor device package and method of fabricating the same. The semiconductor device package may include a variety of semiconductor dice, thereby providing a system on a chip solution. The semiconductor dice are attached to connection locations associated with a conductive trace layer such as through flip-chip technology. A plurality of circuit connection elements is also coupled to the conductive trace layer, either directly or through additional, intervening conductive trace layers. An encapsulation layer may be formed over the dice and substrate. Portions of the circuit connection elements remain exposed through the encapsulation layer for connection to external devices. A plurality of conductive bumps may be formed, each conductive bump being disposed atop an exposed portion of a circuit connection element, to facilitate electrical connection with an external device.

Abstract: A sacrificial for fabricating semiconductor device assemblies and packages with edge contacts includes conductive elements on a surface thereof, which are located so as to align along a street between each adjacent pair of semiconductor devices on the device substrate. A semiconductor device assembly or package includes a semiconductor device, a redistribution layer over an active surface of the semiconductor device, and dielectric material coating at least portions of an outer periphery of the semiconductor device. Peripheral sections of contacts are located on the peripheral edge and electrically isolated therefrom by the dielectric coating. The contacts may also include upper sections that extend partially over the active surface of the semiconductor device. The assembly or package may include any type of semiconductor device, including a processor, a memory device, and emitter, or an optically sensitive device.

Abstract: Systems and methods for packaging integrated circuit chips in castellation wafer level packaging are provided. The active circuit areas of the chips are coupled to castellation blocks and, depending on the embodiment, input/output pads. The castellation blocks and input/output pads are encapsulated and held in place by an encapsulant. When the devices are being fabricated, the castellation blocks and input/output pads are sawed through. If necessary, the wafer portion on which the devices are fabricated may be thinned. The packages may be used as a leadless chip carrier package or may be stacked on top of one another. When stacked, the respective contacts of the packages are preferably coupled. Data may be written to, and received from, packaged chips when a chip is activated. Chips may be activated by applying the appropriate signal or signals to the appropriate contact or contacts.

Abstract: A semiconductor device package and method of fabricating the same. The semiconductor device package may include a variety of semiconductor dice, thereby providing a system on a chip solution. The semiconductor dice are attached to connection locations associated with a conductive trace layer such as through flip-chip technology. A plurality of circuit connection elements is also coupled to the conductive trace layer, either directly or through additional, intervening conductive trace layers. An encapsulation layer may be formed over the dice and substrate. Portions of the circuit connection elements remain exposed through the encapsulation layer for connection to external devices. A plurality of conductive bumps may be formed, each conductive bump being disposed atop an exposed portion of a circuit connection element, to facilitate electrical connection with an external device.

Abstract: The present invention defines a packaging implementation providing a multichip multilayer system on a chip solution. Greater integration of a plurality and variety of known good die contained within cavities formed in a separate substrate is achieved. Additional redistribution and interconnect layers above the multichip configuration may be formed with the redistribution layers terminating in electrical connections such as conductive bumps or balls. In one embodiment, the substrate cavities receive signal device connections, such as conductive bumps, of a plurality of semiconductor dice in a flip-chip configuration. A portion of the substrate's back surface is then removed to a depth sufficient to expose the conductive bumps. In another embodiment, the cavities receive the semiconductor dice with their active surface facing up wherein metal layer connections are formed and coupled to bond pads or other electrical connectors of the semiconductor dice.

Abstract: A method for fabricating a chip-scale package includes securing a device substrate that carries at least two adjacent semiconductor devices to a sacrificial substrate. The sacrificial substrate may include conductive elements on a surface thereof, which are located so as to align along a street between each adjacent pair of semiconductor devices on the device substrate. The device substrate is then severed along each street and the newly formed peripheral edge of each semiconductor device coated with dielectric material. If the sacrificial substrate includes conductive elements, they may be exposed between adjacent semiconductor devices and subsequently serve as lower sections of contacts. Peripheral sections of contacts are formed on the peripheral edge. Upper sections of the contacts may also be formed over the active surfaces of the semiconductor devices. Once the contacts are formed, the sacrificial substrate is substantially removed from the back sides of the semiconductor devices.

Abstract: A wafer level package, and a semiconductor wafer, electronic system, and a memory module that include one or more of the wafer level packages, and methods of fabricating the die packages on a wafer level, and integrated circuit modules that include one or more packages are provided. In one embodiment, the die package comprises a redistribution layer interconnecting two or more dies disposed on a substrate, typically a semiconductor wafer, the redistribution layer including a first trace connecting a bond pad of each of two dies, and a second trace connecting one of the bond pads of the two dies to a ball pad. The die package of the invention can comprise memory devices such as static random access memories (SRAMs), and can be incorporated into a variety of electronic systems as part of a memory package such as single in line memory modules (SIMMs) or dual in line memory modules.

Abstract: A semiconductor device package is disclosed. The semiconductor device package may include a variety of semiconductor dice, thereby providing a system on a chip solution. The semiconductor dice are attached to connection locations associated with a conductive trace layer such as through flip-chip technology. A plurality of circuit connection elements is also coupled to the conductive trace layer, either directly or through additional, intervening conductive trace layers. An encapsulation layer may be formed over the dice and substrate. Portions of the circuit connection elements remain exposed through the encapsulation layer for connection to external devices. A plurality of conductive bumps may be formed, each conductive bump being disposed atop an exposed portion of a circuit connection element, to facilitate electrical connection with an external device.