Abstract: A compound having a structure of Formula I: is described. In the structure of Formula I, RA, RB, and RC are each independently 5 or 6 membered aryl or heteroaryl rings; R1, R2, R3, and A are selected from a variety of substituents, including being joined or fused to form a ring; A is optionally bonded to at least one benzo or azabenzo ring to form fused rings; X1 is B, C, N, O, S or Se; and X2-X7 are independently B, C or N. Formulations and devices, such as an OLEDs, that include the compound containing a structure of Formula I are also described.

Abstract: A compound containing a partial structure of Formula I: is provided. In the structure of Formula I, M is a metal with an atomic number of at least 40; RA, RB, and RC are each independently 5 or 6 membered aryl or heteroaryl rings; R1, R2, R3, and A are each independently selected from a variety of substituents and combinations thereof; A is optionally bonded to RA or RC to form a fused ring; X1 is B, C, N, O, S or Se; X2-X7 are independently B, C or N; and Y1-Y2 are independently C or N. Formulations and devices, such as an OLEDs, that include the compound containing a structure of Formula I are also described.

Abstract: A memory programming method for a rewritable non-volatile memory module having memory cells is provided. The memory programming method includes: performing a first programming process on the memory cells according to write data and obtaining a first programming result of the first programming process; grouping the memory cells into programming groups according to the first programming result; and performing a second programming process on the memory cells according to the write data. The second programming process includes: programming a first programming group among the programming groups by using a first program voltage; and programming a second programming group among the programming groups by using a second program voltage. The first program voltage and the second program voltage are different. Moreover, a memory control circuit unit and a memory storage device are provided.

Abstract: A method for generating a random number, a memory storage device and a control circuit are provided. The method includes: writing data into a plurality of memory cells; reading at least one of the memory cells repeatedly according to a first read voltage to obtain a plurality of sensing currents; and generating the random number according to the sensing currents.

Abstract: A compound having the structure of Formula I is disclosed, where Ga has the structure and Gb has the structure In the structure of Formula I, Z is selected from Si and Ge; Xa and Xb are independently selected from the group consisting of O, S, and Se; the Y and Z atoms forming the six-membered rings in Formula I, Ga, and Gb are each independently selected from C or N; each R1, R2, Ra1, Ra2, Rb1, and Rb2 is independently selected from a variety of substituents; at least one Ra1 is La-Aa; at least one Rb1 is Lb-Ab; Aa and Ab are each independently selected from carbazole, dibenzofuran, dibenzothiophene, dibenzoselenophene, triphenylene, and nitrogen-substituted variants thereof, which are optionally further substituted; and La and Lb are each independently an organic linker. Formulations and devices, such as an OLEDs, that include the compound of Formula I are also described.

Abstract: A memory programming method for a rewritable non-volatile memory module having memory cells is provided. The memory programming method includes: performing a first programming process on the memory cells according to write data and obtaining a first programming result of the first programming process; grouping the memory cells into programming groups according to the first programming result; and performing a second programming process on the memory cells according to the write data. The second programming process includes: programming a first programming group among the programming groups by using a first program voltage; and programming a second programming group among the programming groups by using a second program voltage. The first program voltage and the second program voltage are different. Moreover, a memory control circuit unit and a memory storage device are provided.

Abstract: A compound including a ligand L1 of Formula I, is described. In Formula I: rings A and B each independently represent a 5-membered or 6-membered carbocyclic or heterocyclic ring; X, Y, Z, and W are either carbon or nitrogen; R1 to R6 are selected from a variety of substituents, where adjacent substituents can be joined to form a fused ring; ligand L1 is coordinated to a metal M by X-M and Y-M bonds; and ligand L1 is optionally linked with other ligands to produce a tridentate, tetradentate, pentadentate or hexadentate ligand. Formulations and devices, such as an OLEDs, that include the compound that include a ligand L1 of Formula I are also described.

Abstract: The present disclosure provides a memory management method for a rewritable non-volatile memory module. The rewritable non-volatile memory module includes physical programming units, each of which includes multiple bits. The memory management method includes: identifying a first physical programming unit by applying a predetermined read voltage, where the first physical programming unit is identified as in a fully-erased status; identifying a second and a third physical programming units which are programmed before the first physical programming unit; acquiring status data of the second and the third physical programming unit; computing a difference of the status data between the second and the third physical programming unit; if the difference is larger than a threshold, identifying the second physical programming unit as in a program failure status.

Abstract: A family of phosphorescent emitter compounds containing a carbene ligand LA selected from the group consisting of: is disclosed. These compounds enhance the performance of OLEDs when incorporated therein.

Abstract: Luminescent materials including donor-acceptor compounds with a high triplet energy heteropolyaromatic system, namely, dibenzofuran, dibenzothiophene and dibenzoselenophene with one or multiple nitrogens in the ring as the electron acceptor for use as emitters in organic light emitting diodes is disclosed.

Abstract: A configuration method of erase operation, a memory controlling circuit unit, and a memory storage device are provided. The method includes: determining whether a first use state of a first physical unit conforms to a first default state; and if the first use state conforms to the first default state, adjusting a first erase operation corresponding to the first physical unit from using a first mode to a second mode. Thereby, a threshold voltage distribution of memory cells in an erase state may be maintained in a proper range.

Abstract: A read voltage setting method for a rewritable non-volatile memory module is provided. The method includes: reading test data stored in memory cells of a word line to obtain a corresponding critical voltage distribution and identifying a default read voltage corresponding to the word line based on the corresponding critical voltage distribution; applying a plurality of test read voltages obtained according to the default read voltage to the word line to read a plurality of test page data; and determining an optimized read voltage corresponding to the word line according to the minimum error bit number among a plurality of error bit numbers of the test page data. The method further includes calculating a difference value between the default read voltage and the optimized read voltage as a read voltage adjustment value corresponding to the word line and recording the read voltage adjustment value in a retry table.

Abstract: Novel devices containing organic compounds containing electron donor and acceptor characteristics and that act as emissive dopants are provided. The energy ratio obtained by dividing the T1 energy of the emissive dopant by ?EHOMO-LUMO for the same emissive dopant is at least 0.7 and the first emissive dopant has an energy difference calculated by subtracting the T1 energy of the first emissive dopant from ?EHOMO-LUMO for the first emissive dopant and the energy difference is at smaller than or equal to 1.00 eV for the novel compounds. The compounds exhibit delayed fluorescence properties when incorporated into OLED devices.

Abstract: A compound that has the structure according to Formula 1: as well as, devices and formulations containing the compound of Formula 1 are disclosed. In the compound of Formula 1: X1, X2, X3, X4, X5, and X6 are independently selected from the group consisting of C—R and N; each R is independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and at least one R comprises a donor group with at least two electron donating nitrogens.

Abstract: A decoding method, a memory storage device and a memory controlling circuit are provided. The decoding method includes: sending a read command sequence configured to read the memory cells, so as to obtain a plurality of first verification bits; executing a first decoding procedure according to the first verification bits, and determining whether a first valid codeword is generated; if the first valid codeword is not generated, sending another read command sequence configured to obtain a plurality of second verification bits; calculating a total number of the memory cells conforming to a specific condition according to the second verification bits; obtaining a channel reliability message according to the total number; and executing a second decoding procedure according to the channel reliability message. Accordingly, a correcting ability of decoding may be improved.

Abstract: Novel diarylamino phenyl carbazole compounds are provided. By appropriately selecting the nature of the diarylamino substituent and the substitution on the carbazole nitrogen, compounds with appropriate HOMO and LUMO energies can be obtained for use as materials in a secondary hole transport layer.

Abstract: A method for generating a random number, a memory storage device and a control circuit are provided. The method includes: writing data into a plurality of memory cells; reading at least one of the memory cells repeatedly according to a first read voltage to obtain a plurality of sensing currents; and generating the random number according to the sensing currents.

Abstract: Novel diarylamino phenyl carbazole compounds are provided. By appropriately selecting the nature of the diarylamino substituent and the substitution on the carbazole nitrogen, compounds with appropriate HOMO and LUMO energies can be obtained for use as materials in a secondary hole transport layer.

Abstract: A compound having the structure of Formula 1, as well as, a first device and a formulation including the same are disclosed. In the structure of Formula 1: R5 is and (a) at least one of R1-R4 is or (b) R1 is In addition, R1, R2, R3, R4, A1, A2, A3, A4, A5, A6, A7, A8, A9, A10, B1, B2, B3, B4, B5, B6, B7, B8, B9, B10, Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8, Z1, Z2, Z3, Z4, Z5, Z6, Z7, and Z8, are each independently selected from a variety of substituents, where adjacent A, B, Y, and Z groups are, optionally, joined to form a fused ring structure. Finally, X includes an acceptor group selected from —CmF2m+1, —SimF2m+1, —NCO, —NCS, —OCN, —SCN, —OCmF2m+1, and —SCmF2m+1.

Abstract: Luminescent materials including donor-acceptor compounds with a high triplet energy heteropolyaromatic system, namely, dibenzofuran, dibenzothiophene and dibenzoselenophene with one or multiple nitrogens in the ring as the electron acceptor for use as emitters in organic light emitting diodes is disclosed.