Patents by Inventor Siva Naga Sandeep Chalamalasetty

Siva Naga Sandeep Chalamalasetty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Conductive Interconnects and Methods of Forming Conductive Interconnects
    Publication number: 20230058288
    Abstract: Some embodiments include a method of forming an integrated assembly. An arrangement is formed to include a conductive pillar extending through an insulative mass. An upper surface of the conductive pillar is recessed to form a cavity. An insulative collar is formed within the cavity to line an outer lateral periphery of the cavity. A recessed surface of the conductive pillar is exposed at a bottom of the lined cavity. A conductive expanse is formed over the insulative mass. A portion of the conductive expanse extends into the cavity and is configured as an interconnect. The conductive expanse is patterned into multiple conductive structures. One of the conductive structures includes the interconnect.
    Type: Application
    Filed: November 2, 2022
    Publication date: February 23, 2023
    Applicant: Micron Technology, Inc.
    Inventors: Raju Ahmed, Frank Speetjens, Darin S. Miller, Siva Naga Sandeep Chalamalasetty, Dave Pratt, Yi Hu, Yung-Ta Sung, Aaron K. Belsher, Allen R. Gibson
  • Conductive interconnects and methods of forming conductive interconnects
    Patent number: 11545391
    Abstract: Some embodiments include a method of forming an integrated assembly. An arrangement is formed to include a conductive pillar extending through an insulative mass. An upper surface of the conductive pillar is recessed to form a cavity. An insulative collar is formed within the cavity to line an outer lateral periphery of the cavity. A recessed surface of the conductive pillar is exposed at a bottom of the lined cavity. A conductive expanse is formed over the insulative mass. A portion of the conductive expanse extends into the cavity and is configured as an interconnect. The conductive expanse is patterned into multiple conductive structures. One of the conductive structures includes the interconnect.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: January 3, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Raju Ahmed, Frank Speetjens, Darin S. Miller, Siva Naga Sandeep Chalamalasetty, Dave Pratt, Yi Hu, Yung-Ta Sung, Aaron K. Belsher, Allen R. Gibson
  • MICROELECTRONIC DEVICES INCLUDING MEMORY CELL STRUCTURES, AND RELATED METHODS AND ELECTRONIC SYSTEMS
    Publication number: 20220375942
    Abstract: A microelectronic device comprises memory cell structures extending from a base material. At least one memory cell structure of the memory cell structures comprises a central portion in contact with a digit line, extending from the base material and comprising opposing arcuate surfaces, an end portion in contact with a storage node contact on a side of the central portion, and an additional end portion in contact with an additional storage node contact on an opposite side of the central portion. Related microelectronic devices, electronic systems, and methods are also described.
    Type: Application
    Filed: May 18, 2021
    Publication date: November 24, 2022
    Inventors: Stephen D. Snyder, Thomas A. Figura, Siva Naga Sandeep Chalamalasetty, Ping Chieh Chiang, Scott L. Light, Yashvi Singh, Yan Li, Song Guo
  • Conductive Interconnects and Methods of Forming Conductive Interconnects
    Publication number: 20210249304
    Abstract: Some embodiments include a method of forming an integrated assembly. An arrangement is formed to include a conductive pillar extending through an insulative mass. An upper surface of the conductive pillar is recessed to form a cavity. An insulative collar is formed within the cavity to line an outer lateral periphery of the cavity. A recessed surface of the conductive pillar is exposed at a bottom of the lined cavity. A conductive expanse is formed over the insulative mass. A portion of the conductive expanse extends into the cavity and is configured as an interconnect. The conductive expanse is patterned into multiple conductive structures. One of the conductive structures includes the interconnect.
    Type: Application
    Filed: February 11, 2020
    Publication date: August 12, 2021
    Applicant: Micron Technology, Inc.
    Inventors: Raju Ahmed, Frank Speetjens, Darin S. Miller, Siva Naga Sandeep Chalamalasetty, Dave Pratt, Yi Hu, Yung-Ta Sung, Aaron K. Belsher, Allen R. Gibson