Patents by Inventor Siva Suri Chandra Rao Bhesetti

Siva Suri Chandra Rao Bhesetti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nozzle for uniform plasma processing
    Patent number: 11053590
    Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: July 6, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Rohit Mishra, Siva Suri Chandra Rao Bhesetti, Eng Sheng Peh, Sriskantharajah Thirunavukarasu, Shoju Vayyapron, Cheng Sun
  • NOZZLE FOR UNIFORM PLASMA PROCESSING
    Publication number: 20200017972
    Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.
    Type: Application
    Filed: September 26, 2019
    Publication date: January 16, 2020
    Inventors: Rohit Mishra, Siva Suri Chandra Rao Bhesetti, Eng Sheng Peh, Sriskantharajah Thirunavukarasu, Shoju Vayyapron, Cheng Sun
  • Nozzle for uniform plasma processing
    Patent number: 10465288
    Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.
    Type: Grant
    Filed: August 15, 2014
    Date of Patent: November 5, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Rohit Mishra, Siva Suri Chandra Rao Bhesetti, Eng Sheng Peh, Sriskantharajah Thirunavukarasu, Shoju Vayyapron, Cheng Sun
  • Methods for fabricating dual damascene structures in low temperature dielectric materials
    Patent number: 9390964
    Abstract: Methods for fabricating dual damascene structures are provided herein. In some embodiments, a method for fabricating a dual damascene interconnect structure may include patterning a first mask layer atop a substrate disposed in a process chamber, wherein the substrate includes one or more low temperature dielectric layers to define a first etch pattern, and wherein the one or more low temperature dielectric layers are formed atop the substrate at a temperature below about 180 degrees Celsius; etching the first etch pattern into the one or more low temperature dielectric layers; patterning a second mask layer atop the substrate to define a second etch pattern, wherein the first etch pattern and the second etch pattern are aligned; and etching the second etch pattern into the one or more low temperature dielectric layers to form a dual damascene pattern in the substrate.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: July 12, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jayagatan Ram Vijayen, Siva Suri Chandra Rao Bhesetti
  • NOZZLE FOR UNIFORM PLASMA PROCESSING
    Publication number: 20160047040
    Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.
    Type: Application
    Filed: August 15, 2014
    Publication date: February 18, 2016
    Inventors: ROHIT MISHRA, Siva Suri Chandra Rao Bhesetti, Eng Sheng Peh, Sriskantharajah Thirunavukarasu, Shoju Vayyapron, Cheng Sun
  • METHODS FOR FABRICATING DUAL DAMASCENE STRUCTURES IN LOW TEMPERATURE DIELECTRIC MATERIALS
    Publication number: 20140287579
    Abstract: Methods for fabricating dual damascene structures are provided herein. In some embodiments, a method for fabricating a dual damascene interconnect structure may include patterning a first mask layer atop a substrate disposed in a process chamber, wherein the substrate includes one or more low temperature dielectric layers to define a first etch pattern, and wherein the one or more low temperature dielectric layers are formed atop the substrate at a temperature below about 180 degrees Celsius; etching the first etch pattern into the one or more low temperature dielectric layers using an inductively coupled plasma formed by a power source capable of providing power within a range from about 10 watts to about 10,000 watts at a frequency of about 2 MHz to about 13.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 25, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Jayagatan Ram Vijayen, Siva Suri Chandra Rao Bhesetti