Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Abstract: The present disclosure relates to a film formed with a metal precursor and an organic precursor, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the film includes alternating layers of metal-containing layers and organic layers. In other embodiments, the film includes a matrix of deposited metal and organic constituents.

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Abstract: Methods and apparatuses for performing spacer on spacer multiple patterning schemes using an exhumable first spacer material and a complementary second spacer material. Certain embodiments involve using a tin oxide spacer material for one of the spacer materials in spacer on spacer self aligned multiple patterning.

Abstract: The present disclosure relates to stacks having a hermetic overlayer, as well as methods and apparatuses for applying such hermetic overlayers. In particular embodiments, the hermetic overlayer allows a film to be employed as a positive tone, EUV photoresist with dry development.

Abstract: Methods, apparatus, and systems are provided herein for processing a substrate. Generally, the processing involves Spacer-on-Spacer (SoS) Self-Aligned Quadruple Patterning (SAQP) techniques. The disclosed techniques provide a novel process flow that reduces defects by ensuring that cores are not removed from the substrate until the substrate is transferred to a deposition chamber used to deposit a second spacer layer. This reduces or eliminates the risk of structural damage to features on the substrate while the substrate is being transferred or cleaned. Such structural damage is common when the cores are removed from the substrate prior to cleaning and transfer.

Abstract: Methods for making thin-films on semiconductor substrates, may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by providing a substrate having a plurality of protruding tin oxide features (mandrels) residing on an exposed etch stop layer. Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrel (e.g., leaving at least 50%, such as at least 90% of initial height at the sidewall). Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning the etch stop layer and underlying layers.

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.

Abstract: Methods and apparatuses for processing semiconductor substrates in an integration scheme to form chamferless vias are provided herein. Methods include bifurcating etching of dielectric by depositing a conformal removable sealant layer having properties for selective removal relative to dielectric material without damaging dielectric material. Some methods include forming an ashable conformal sealant layer. Methods also include forming hard masks including a Group IV metal and removing conformal removable sealant layers and hard masks in one operation using same etching chemistries.

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by providing a substrate having a plurality of protruding tin oxide features (mandrels) residing on an exposed etch stop layer. Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrel (e.g., leaving at least 50%, such as at least 90% of initial height at the sidewall). Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning the etch stop layer and underlying layers.