Abstract: A system and method for detecting a milling endpoint on a semiconductor sample by directing an ion beam from a focused ion beam (FIB) apparatus at the sample and using charge pulse detection electronics (CPDE) components to generate a distribution curve on a histogram display. A preferred configuration of the CPDE components includes a charge preamplifier, a pulse amplifier, a pulse shaper, and a multichannel analyzer (MCA).

Abstract: A system and method for detecting a milling endpoint on a semiconductor sample by directing an ion beam from a focused ion beam (FIB) apparatus at the sample and using charge pulse detection electronics (CPDE) components to generate a distribution curve on a histogram display. A preferred configuration of the CPDE components includes a charge preamplifier, a pulse amplifier, a pulse shaper, and a multichannel analyzer (MCA).

Abstract: An improved method of performing optical beam induced current imaging of semiconductor junctions. According to the method, a single wired contact to an integrated circuit (for example through use of a conventional conductive probe) is made at a point that makes electrical contact to a first side of a junction to be analyzed. A first line connects the wired contact to an amplifier, and a second line carries return current from the amplifier to a ground connection. A capacitive return connection is then used to couple return current from a second side of the junction to ground. The actual value of capacitance in the return connection is not of fundamental importance in the practice of the invention, but generally larger capacitance values are preferred and allow increased induced current flow. An increase in the optical beam power also results in more induced current being generated. This causes a faster decay and results in a better signal-to-noise ratio at a higher scanning beam rate.