Patents by Inventor Sivashankar Krishnamoorthy

Sivashankar Krishnamoorthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11754527
    Abstract: An aspect of the invention pertains to an affinity biosensor for sensing an analyte (a biomolecule) in a fluid, comprising an interface for contacting the fluid and adsorption of the analyte. The interface comprises a binary pattern of nanoscale regions having affinity for the analyte and a passivated region. The nanoscale regions are isolated from one another by the passivated region in such a way that adsorption of the analyte on the interface is confined to the nanoscale regions. The nanoscale regions have diameters comprised in the range from 5 to 200 nm. The nanoscale regions have together a surface area amounting to at least 15% of the surface area of the interface. A further aspect of the invention relates to a method of using such a sensor.
    Type: Grant
    Filed: August 18, 2020
    Date of Patent: September 12, 2023
    Assignee: LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)
    Inventors: Sivashankar Krishnamoorthy, Matteo Beggiato
  • Patent number: 9647183
    Abstract: There is provided a method of fabricating a vertical light emitting diode which includes forming a light emitting diode structure. Forming the light emitting diode structure includes: forming a first material layer of a first conductivity type, forming a second material layer of a second conductivity type, forming a light emitting layer between the first material layer and the second material layer, and forming a plurality of generally ordered photonic nanostructures at a surface of the first material layer through which light generated from the light emitting layer is emitted for enhancing light extraction efficiency of the vertical light emitting diode. In particular, forming a plurality of generally ordered photonic nanostructures includes forming a self-assembled template including generally ordered nanoparticles on the surface of the first material layer to function as a mask for forming the photonic nanostructures at said surface of the first material layer.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: May 9, 2017
    Assignee: Agency for Science, Technology and Research
    Inventors: Sivashankar Krishnamoorthy, Krishna Kumar Manippady, Surani Bin Dolmanan, Kaixin Vivian Lin, Siew Lang Teo, Sudhiranjan Tripathy
  • Publication number: 20160049563
    Abstract: There is provided a method of fabricating a vertical light emitting diode which includes forming a light emitting diode structure. Forming the light emitting diode structure includes: forming a first material layer of a first conductivity type, forming a second material layer of a second conductivity type, forming a light emitting layer between the first material layer and the second material layer, and forming a plurality of generally ordered photonic nanostructures at a surface of the first material layer through which light generated from the light emitting layer is emitted for enhancing light extraction efficiency of the vertical light emitting diode. In particular, forming a plurality of generally ordered photonic nanostructures includes forming a self-assembled template including generally ordered nanoparticles on the surface of the first material layer to function as a mask for forming the photonic nanostructures at said surface of the first material layer.
    Type: Application
    Filed: October 30, 2015
    Publication date: February 18, 2016
    Inventors: Sivashankar Krishnamoorthy, Krishna Kumar Manippady, Surani Bin Dolmanan, Kaixin Vivian Lin, Siew Lang Teo, Sudhiranjan Tripathy
  • Patent number: 9202979
    Abstract: There is provided a method of fabricating a vertical light emitting diode which includes forming a light emitting diode structure. Forming the light emitting diode structure includes: forming a first material layer of a first conductivity type, forming a second material layer of a second conductivity type, forming a light emitting layer between the first material layer and the second material layer, and forming a plurality of generally ordered photonic nanostructures at a surface of the first material layer through which light generated from the light emitting layer is emitted for enhancing light extraction efficiency of the vertical light emitting diode. In particular, forming a plurality of generally ordered photonic nanostructures includes forming a self-assembled template including generally ordered nanoparticles on the surface of the first material layer to function as a mask for forming the photonic nanostructures at said surface of the first material layer.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: December 1, 2015
    Assignee: Agency for Science, Technology and Research
    Inventors: Sivashankar Krishnamoorthy, Krishna Kumar Manippady, Surani Bin Dolmanan, Kaixin Vivian Lin, Siew Lang Teo, Sudhiranjan Tripathy
  • Publication number: 20140183448
    Abstract: There is provided a method of fabricating a vertical light emitting diode which includes forming a light emitting diode structure. Forming the light emitting diode structure includes: forming a first material layer of a first conductivity type, forming a second material layer of a second conductivity type, forming a light emitting layer between the first material layer and the second material layer, and forming a plurality of generally ordered photonic nanostructures at a surface of the first material layer through which light generated from the light emitting layer is emitted for enhancing light extraction efficiency of the vertical light emitting diode. In particular, forming a plurality of generally ordered photonic nanostructures includes forming a self-assembled template including generally ordered nanoparticles on the surface of the first material layer to function as a mask for forming the photonic nanostructures at said surface of the first material layer.
    Type: Application
    Filed: December 27, 2013
    Publication date: July 3, 2014
    Applicant: Agency for Science, Technology and Research
    Inventors: Sivashankar Krishnamoorthy, Krishna Kumar Manippady, Surani Bin Dolmanan, Kaixin Vivian Lin, Siew Lang Teo, Sudhiranjan Tripathy
  • Publication number: 20130045877
    Abstract: A method of manufacturing a substrate is provided. The method comprises, in some aspects, a) providing a support; b) forming a template by attaching a plurality of polymeric nanoparticles some or all having a core-shell structure to the support, wherein the core comprises a first polymer and the shell comprises a second polymer; and c) forming the metal nanoarray substrate by attaching a plurality of metallic nanoparticles to at least some of the polymeric nanoparticles of the template. A biosensor comprising a substrate manufactured by the method, and a method for the detection of an analyte in a sample by surface enhanced Raman spectroscopy (SERS) is also provided.
    Type: Application
    Filed: August 17, 2012
    Publication date: February 21, 2013
    Applicant: Agency for Science, Technology and Research
    Inventors: Fung Ling Yap, Sivashankar Krishnamoorthy, Praveen Thoniyot, Vignesh Suresh, Sanghamitra Dinda
  • Publication number: 20100151491
    Abstract: The present invention has been achieved in order to solve the problems which may occur in the nanopatterning of biomolecules with an aim to improve the activity and bio-recognition properties of the surface-immobilized biomolecules. A structure for bio-detection according to one aspect of the present invention comprises a large-scale chemical nanopattern of fouling and non-fouling areas fabricated on a homogeneous surface of the structure; and a biomolecule confined to the fouling area.
    Type: Application
    Filed: May 19, 2008
    Publication date: June 17, 2010
    Applicant: FUJIREBIO INC.
    Inventors: Michael Himmelhaus, Sivashankar Krishnamoorthy