Abstract: A light-emitting diode includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor layer, a second semiconductor layer and an active layer, and further includes a first mesa and a second mesa. The first mesa has a current blocking structure adjacent to the second mesa and a current conduction portion located below the current blocking structure. The first semiconductor has a first surface facing away from the active layer, the first mesa is provided with a second surface facing away from the first surface, a distance between the second surface and the first surface is greater than or equal to a half of a thickness of the first semiconductor layer, and the current conduction portion has a height in a thickness direction of the semiconductor layer sequence being ? to ½ of the thickness of the first semiconductor layer. The light-emitting diode can improve carrier injection efficiency.

Abstract: A light-emitting device includes a semiconductor epitaxial structure including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked in such order in a stacking direction, and including a plurality of through holes. The through holes extend downwardly in a direction from the second semiconductor layer to the first semiconductor layer. The through holes expose a portion of a surface of the first semiconductor layer. The light-emitting device has an ampacity. Each of the through holes has a first radius. A ratio of the first radius to the ampacity ranges from 0.1 to 0.4. A light-emitting apparatus including the light-emitting device is also provided.

Abstract: An ultraviolet light-emitting diode includes a semiconductor layered stack, an ohmic contact layer, a metal current spreading layer, and a reflective layer. The semiconductor layered stack includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and generating light by electron-hole recombination. The ohmic contact layer is formed on the second semiconductor layer, and forms an ohmic contact with the second semiconductor layer. The metal current spreading layer is formed on the ohmic contact layer, and electrically connected to the second semiconductor layer through the ohmic contact layer. The reflective layer is formed on the metal current spreading layer, and covers an exposed surface of the second semiconductor layer. A light-emitting device including the ultraviolet light-emitting diode is also provided.

Abstract: A light-emitting device includes a semiconductor laminate, a first contact electrode, and a second contact electrode. The semiconductor laminate includes a first semiconductor layer, an active layer, and a second semiconductor layer being laminated in a thickness direction. The semiconductor laminate has a first portion having a patterned structure that has a first surface constituted by the first semiconductor layer, a second surface opposite to the first surface and away from the first semiconductor layer, and a side surface interconnecting the first surface and the second surface, and a second portion being a light-emitting area. The first contact electrode is formed on the first portion, electrically connected to the first semiconductor layer and in contact with the first surface, the second surface and the side surface of the patterned structure. The second contact electrode is formed on the second portion and electrically connected to the second semiconductor layer.

Abstract: According to the disclosure, the light emitting device includes a substrate, a semiconductor structure, a first electrode unit, a second electrode unit, a plurality of micro elements. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor structure located on top of the first surface of the substrate, and has a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked sequentially. The first electrode unit is electrically connected to the first semiconductor layer. The second electrode unit is electrically connected to the second semiconductor layer. The plurality of micro elements are located on the second surface of the substrate. Each of the micro elements has a base that is protrusion that has a base diameter ranging from 400 nm to 1000 nm.

Abstract: A light-emitting device includes an epitaxial light-emitting structure formed on a substrate, a first electrode and a second electrode. The epitaxial light-emitting structure sequentially includes: a first type semiconductor layer including an Al component and electrically connected to the first electrode; an active layer; a second type semiconductor layer electrically connected to the second electrode; a first recess extending from the second type semiconductor layer to the first type semiconductor layer and having a projected area on the substrate ranging from 20% to 70% of that of the epitaxial light-emitting structure; and a second recess extending from the first type semiconductor layer toward the substrate. A light-emitting apparatus is also disclosed.

Abstract: A light-emitting device includes a substrate, a first type semiconductor layer, a protrusion, and a first reflection structure. The first type semiconductor layer is disposed on a surface of the substrate, and has a surface that has first and second conductive regions. The first type semiconductor layer is made of AlxGa1-xN, and x ranges from 0 to 1. A protrusion includes an active layer and a second type semiconductor layer that are sequentially disposed on the first conductive region of the surface of the first type semiconductor layer in such order. A first reflection structure is disposed in the protrusion, and penetrates through the second type semiconductor layer, the active layer of the protrusion and into the first type semiconductor layer. The light-emitting device emits light that has an emission wavelength ranging from 200 nm to 320 nm.