Abstract: Provided is a method of laser interference lithography, including: performing an interference exposure on a wafer coated with a photoresist; and performing a patterned flood exposure on the interference-exposed wafer, wherein the performing the flood exposure includes: determining a first light field distribution in the interference-exposed wafer; determining a light field distribution of the floodlight source as a second light field distribution based on the first light field distribution, an expected pattern distribution, and parameters of the floodlight source used for the flood exposure; and patterning the light field distribution of the floodlight source based on the second light field distribution, and controlling the floodlight source having the patterned light field distribution to perform the flood exposure on the interference-exposed wafer, so as to form the expected pattern distribution in the flood-exposed wafer.