Abstract: A method for monitoring device characteristics of semiconductor integrated circuits. The device characteristics includes censored data and uncensored data. The method includes determining a plurality of minimum breakdown voltages numbered from 1 through N, respectively, for a plurality of lots (e.g., wafer fabrication lots) numbered from 1 through N. Each of the plurality of minimum breakdown voltages is respectively indicative of the plurality of samples through order statistics. One or more of the plurality of samples includes one or more uncensored data points and one or more censored data points. The method includes processing the minimum breakdown voltages, respectively, for the plurality of lots. Each of the minimum breakdown voltages is processed for the respective plurality of lots and is indicative of a population characteristic breakdown voltage numbered from 1 through N for the respective lot numbered from 1 through N.

Abstract: A method for manufacturing semiconductor devices or other types of devices and/or entities. The method includes providing a process (e.g., etching, deposition, implantation) associated with a manufacture of a semiconductor device/ The method includes collecting a plurality information (e.g., data) having a non-monotonic trend of at least one parameter associated with the process over a determined period. The method includes processing the plurality of information having the non-monotonic trend. The method includes detecting an increasing or a decreasing trend from the processed plurality of information having the non-monotonic trend. The method includes performing an action based upon at least the detected increasing or decreasing trend.

Abstract: A method for monitoring device characteristics of semiconductor integrated circuits. The device characteristics includes censored data and uncensored data. The method includes determining a plurality of minimum breakdown voltages numbered from 1 through N, respectively, for a plurality of lots (e.g., wafer fabrication lots) numbered from 1 through N. Each of the plurality of minimum breakdown voltages is respectively indicative of the plurality of samples through order statistics. One or more of the plurality of samples includes one or more uncensored data points and one or more censored data points. The method includes processing the minimum breakdown voltages, respectively, for the plurality of lots. Each of the minimum breakdown voltages is processed for the respective plurality of lots and is indicative of a population characteristic breakdown voltage numbered from 1 through N for the respective lot numbered from 1 through N.

Abstract: A method for manufacturing semiconductor devices or other types of devices and/or entities. The method includes providing a process (e.g., etching, deposition, implantation) associated with a manufacture of a semiconductor device/The method includes collecting a plurality information (e.g., data) having a non-monotonic trend of at least one parameter associated with the process over a determined period. The method includes processing the plurality of information having the non-monotonic trend. The method includes detecting an increasing or a decreasing trend from the processed plurality of information having the non-monotonic trend. The method includes performing an action based upon at least the detected increasing or decreasing trend.