Abstract: A PIN type infrared photodiode including a first electrode, a n-type semiconductor, an atomic layer deposition coating of lead sulfide, a p-type semiconductor and a second electrode, wherein the n-type semiconductor comprises nanowires conformally coated with the atomic layer deposition coating of lead sulfide.

Abstract: A semiconductor nanocrystal particle including a transition metal chalcogenide represented by Chemical Formula 1, the semiconductor nanocrystal particle having a size of less than or equal to about 100 nanometers, and a method of producing the same: M1M2Cha3 ??Chemical Formula 1 wherein M1 is Ca, Sr, Ba, or a combination thereof, M2 is Ti, Zr, Hf, or a combination thereof, and Cha is S, Se, Te, or a combination thereof.

Abstract: There is provided a quantum dot comprising a core comprising a semiconductor and a shell substantially covering the core. The core has a first side and a second side opposite the first side. The core is disposed eccentrically inside the shell such that the shell is thinnest at the first side and thickest at the second side. Moreover, the shell has a thickness of greater than or equal to zero at the first side. The core and the shell have different respective lattice constants such that the shell exerts a straining force on the core. The straining force is configured to modify an excitonic fine structure of the core.

Abstract: A PIN type infrared photodiode including a first electrode, a n-type semiconductor, an atomic layer deposition coating of lead sulfide, a p-type semiconductor and a second electrode, wherein the n-type semiconductor comprises nanowires conformally coated with the atomic layer deposition coating of lead sulfide.

Abstract: An optoelectronic device has an electron transport layer, an active layer, and a hole transport layer. Each of the electron transport layer, the active layer, and the hole transport layer has quantum dots.

Abstract: Disclosed herein are perovskite based optoelectronic devices made entirely via solution-processing at low temperatures (<150° C.) which provide for simple manufacturing, compatibility with flexible substrates, and perovskite-based tandem devices. These perovskite based optoelectronic devices are produced using an electron transport layer on which the perovskite layer is formed which is passivated using a ligand selected to reduce electron-hole recombination at the interface between the electron transport layer and the perovskite layer.

Abstract: There is provided a quantum dot comprising a core comprising a semiconductor and a shell substantially covering the core. The core has a first side and a second side opposite the first side. The core is disposed eccentrically inside the shell such that the shell is thinnest at the first side and thickest at the second side. Moreover, the shell has a thickness of greater than or equal to zero at the first side. The core and the shell have different respective lattice constants such that the shell exerts a straining force on the core. The straining force is configured to modify an excitonic fine structure of the core.

Abstract: The present disclosure provides substantially homogeneously dispersed multimetal oxy-hydroxide catalyst comprising at least two metals, at least one metal being a transition metal, and at least a second metal which is structurally dissimilar to at least one metal, such that the multimetal oxy-hydroxide is characterized by being substantially homogeneously dispersed and generally not crystalline. A key feature of the present materials is that the presence of the structurally dissimilar metal results in sufficient strain produced in the final multimetal oxy-hydroxide material to prevent crystallization from occurring. The resulting materials are specifically not annealed at temperatures that would induce crystallization in order to avoid the expected phase segregation that would occur during crystallization.