Abstract: A fuel cell flow field plate includes an aluminum substrate plate having a first side and a second side wherein the first side of the aluminum substrate plate defines a plurality of channels for transporting a first fuel cell reactant gas. The flow field plate also includes a first metal interlayer deposited on the first side of the aluminum substrate plate, a second metal interlayer deposited on the second side of the aluminum substrate plate, a first amorphous carbon layer deposited on the first metal interlayer, and a second amorphous carbon layer deposited on the second metal interlayer. The first amorphous carbon layer and second amorphous carbon layer each independently have a density greater than or equal to 1.2 g/cc.

Abstract: A method for manufacturing a coated metal substrate includes the steps of: (1) inserting a substrate with a chromium(III) oxide layer inside a CVD chamber; (2) heating the substrate to a temperature which falls in the range of 400 to 500 degrees Celsius; (3) transporting gaseous nitrogen (N2) and tantalum chloride (TaCl5) into the CVD chamber for at least two cycles; (4) ceasing the transportation of tantalum chloride (TaCl5) while nitrogen continues to flow from the inlet to the outlet; (5) reacting the tantalum chloride and the chromium(III) oxide and creating by-products; and (6) vacuuming the by-product matter from the CVD chamber via the flowing nitrogen gas.

Abstract: A method for manufacturing a coated metal substrate includes the steps of: (1) inserting a substrate with a chromium(III) oxide layer inside a CVD chamber; (2) heating the substrate to a temperature which falls in the range of 400 to 500 degrees Celsius; (3) transporting gaseous nitrogen (N2) and tantalum chloride (TaCl5) into the CVD chamber for at least two cycles; (4) ceasing the transportation of tantalum chloride (TaCl5) while nitrogen continues to flow from the inlet to the outlet; (5) reacting the tantalum chloride and the chromium(III) oxide and creating by-products; and (6) vacuuming the by-product matter from the CVD chamber via the flowing nitrogen gas.

Abstract: A method and system for manufacturing a corrosion resistant performs the steps of: (1) providing a substrate; (2) moving the substrate to a cleaning chamber via the conveyor; (3) cleaning the substrate; (4) moving the substrate into a first pressure chamber; (5) moving the substrate out of the first pressure chamber; (5) determining a first temperature change in the substrate at the first pressure chamber; (6) adjusting a second heat source at a second pressure chamber based on the first temperature change; and (7) moving the substrate into the second pressure chamber. The system includes at least one pressure chamber housing a heat source wherein a temperature sensor is disposed at the inlet and at the outlet of the pressure chamber. A control unit may be in communication with the temperature sensors and the heat sources.

Abstract: A flow field plate for a fuel cell includes an electrically conductive substrate at least partially defining a plurality of flow channels. A carbon layer is disposed over the flow field plate. The carbon layer includes graphene, carbon nanotubes, or combinations thereof and has a thickness less than about 10 nanometers. Chemical vapor deposition and atomic layer deposition processes for forming graphene layers on a flow field plate are also described.

Abstract: A fuel cell flow field plate includes an aluminum substrate plate having a first side and a second side wherein the first side of the aluminum substrate plate defines a plurality of channels for transporting a first fuel cell reactant gas. The flow field plate also includes a first metal interlayer deposited on the first side of the aluminum substrate plate, a second metal interlayer deposited on the second side of the aluminum substrate plate, a first amorphous carbon layer deposited on the first metal interlayer, and a second amorphous carbon layer deposited on the second metal interlayer. The first amorphous carbon layer and second amorphous carbon layer each independently have a density greater than or equal to 1.2 g/cc.

Abstract: A flow field plate for a fuel cell includes an electrically conductive substrate at least partially defining a plurality of flow channels. A carbon layer is disposed over the flow field plate. The carbon layer includes graphene, carbon nanotubes, or combinations thereof and has a thickness less than about 10 nanometers. Chemical vapor deposition and atomic layer deposition processes for forming graphene layers on a flow field plate are also described.

Abstract: A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment, a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.

Abstract: A method for forming electrode materials uniformly and conformally within openings having small dimensions, including sublithographic dimensions, or high aspect ratios. The method includes the steps of providing an insulator layer having an opening formed therein, and forming a conformal conductive or semiresistive material over and within the opening. The method is a CVD or ALD process for forming metal nitride, metal aluminum nitride, and metal silicon nitride electrode compositions. The methods utilize metal precursors containing one or more ligands selected from alkyl, allyl, alkene, alkyne, acyl, amide, amine, immine, imide, azide, hydrazine, silyl, alkylsilyl, silylamine, chelating, hydride, cyclic, carbocyclic, cyclopentadienyl, phosphine, carbonyl, or halide. Suitable precursors include monometallic precursors having the general formula MRn, where M is a metal, R designates a ligand as indicated above and n is an integer corresponding to the number of ligands bonded to the central metal atom.

Abstract: A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment,. a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.

Abstract: A method for forming electrically stimulable materials, including programmable resistance and electrical switching materials, in high aspect ratio features. The method includes forming a seed layer in the recessed portion of a feature and using the seed layer to direct the vapor phase deposition of an electrically stimulable material. The seed layer may provide nucleation sites that lead to preferential deposition of the electrically stimulable material on the seed layer relative to the sidewalls of the feature. The seed layer may promote the formation of a finely crystalline morphology of the electrically stimulable material to facilitate deposition in the recessed portions of a feature and inhibit blocking of the top of the feature by large crystals.

Abstract: Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.

Abstract: A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment, a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.

Abstract: Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.

Abstract: Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.

Abstract: Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.