Abstract: An electronic substrate includes a dielectric core, a first conducting layer on a first side of the core and a second conducting layer on the second side of the core opposite the first side. At least one differential coaxial through-via includes a first inner signal through-via that is at least electrical conductor lined for a first signal path and at least a second inner signal through-via that is also at least electrical conductor lined positioned side-by-side and being dielectrically isolated from the first inner signal through-via for a second signal path. An annular-shaped outer ground shield enclosure is at least conductor lined that surrounds and is dielectrically isolated from both the first and second inner signal through-vias.

Abstract: A semiconductor package includes a multilayer substrate including a dielectric layer, a first conductive layer forming a first set of electrical contacts, a second conductive layer forming package electrical contacts and two capacitor electrical contacts, conductive vias extending through the dielectric layer between the first conductive layer with the second conductive layer, and a solder mask layer over the second conductive layer. The semiconductor package further includes a semiconductor die on the first side of the multilayer substrate electrically connected a capacitor on the second side of the multilayer substrate. A recessed portion of the capacitor is within a capacitor opening of the solder mask layer between the two capacitor electrical contacts and a board-side surface of the solder mask layer.

Abstract: An electronic substrate includes a dielectric core, a first conducting layer on a first side of the core and a second conducting layer on the second side of the core opposite the first side. At least one differential coaxial through-via includes a first inner signal through-via that is at least electrical conductor lined for a first signal path and at least a second inner signal through-via that is also at least electrical conductor lined positioned side-by-side and being dielectrically isolated from the first inner signal through-via for a second signal path. An annular-shaped outer ground shield enclosure is at least conductor lined that surrounds and is dielectrically isolated from both the first and second inner signal through-vias.

Abstract: An electronic device includes a multilevel package substrate, a die, a lid, and a package structure that encloses the die, a portion of the lid, and a portion of the multilevel package substrate, where the package structure fills a gap between a side of another portion of the lid and a side of the die. A method includes attaching a die to a multilevel package substrate with a first side of the die facing the multilevel package substrate and a second side facing away from the multilevel package substrate; positioning a lid on the multilevel package substrate with a first portion of the lid spaced apart from the second side of the die; and forming a package structure that encloses the die and a portion of the multilevel package substrate and fills a gap between the first portion of the lid and the second side of the die.

Abstract: A semiconductor package includes a multilayer substrate including a dielectric layer, a first conductive layer forming a first set of electrical contacts, a second conductive layer forming package electrical contacts and two capacitor electrical contacts, conductive vias extending through the dielectric layer between the first conductive layer with the second conductive layer, and a solder mask layer over the second conductive layer. The semiconductor package further includes a semiconductor die on the first side of the multilayer substrate electrically connected a capacitor on the second side of the multilayer substrate. A recessed portion of the capacitor is within a capacitor opening of the solder mask layer between the two capacitor electrical contacts and a board-side surface of the solder mask layer.

Abstract: A semiconductor package includes a multilayer substrate including a dielectric layer, a first conductive layer forming a first set of electrical contacts, a second conductive layer forming package electrical contacts and two capacitor electrical contacts, conductive vias extending through the dielectric layer between the first conductive layer with the second conductive layer, and a solder mask layer over the second conductive layer. The semiconductor package further includes a semiconductor die on the first side of the multilayer substrate electrically connected a capacitor on the second side of the multilayer substrate. A recessed portion of the capacitor is within a capacitor opening of the solder mask layer between the two capacitor electrical contacts and a board-side surface of the solder mask layer.

Abstract: An electronic substrate includes a dielectric core, a first conducting layer on a first side of the core and a second conducting layer on the second side of the core opposite the first side. At least one differential coaxial through-via includes a first inner signal through-via that is at least electrical conductor lined for a first signal path and at least a second inner signal through-via that is also at least electrical conductor lined positioned side-by-side and being dielectrically isolated from the first inner signal through-via for a second signal path. An annular-shaped outer ground shield enclosure is at least conductor lined that surrounds and is dielectrically isolated from both the first and second inner signal through-vias.

Abstract: An electronic substrate includes a dielectric core, a first conducting layer on a first side of the core and a second conducting layer on the second side of the core opposite the first side. At least one differential coaxial through-via includes a first inner signal through-via that is at least electrical conductor lined for a first signal path and at least a second inner signal through-via that is also at least electrical conductor lined positioned side-by-side and being dielectrically isolated from the first inner signal through-via for a second signal path. An annular-shaped outer ground shield enclosure is at least conductor lined that surrounds and is dielectrically isolated from both the first and second inner signal through-vias.

Abstract: A semiconductor package includes a multilayer substrate including a dielectric layer, a first conductive layer forming a first set of electrical contacts, a second conductive layer forming package electrical contacts and two capacitor electrical contacts, conductive vias extending through the dielectric layer between the first conductive layer with the second conductive layer, and a solder mask layer over the second conductive layer. The semiconductor package further includes a semiconductor die on the first side of the multilayer substrate electrically connected a capacitor on the second side of the multilayer substrate. A recessed portion of the capacitor is within a capacitor opening of the solder mask layer between the two capacitor electrical contacts and a board-side surface of the solder mask layer.

Abstract: An electronic substrate includes a dielectric core, a first conducting layer on a first side of the core and a second conducting layer on the second side of the core opposite the first side. At least one differential coaxial through-via includes a first inner signal through-via that is at least electrical conductor lined for a first signal path and at least a second inner signal through-via that is also at least electrical conductor lined positioned side-by-side and being dielectrically isolated from the first inner signal through-via for a second signal path. An annular-shaped outer ground shield enclosure is at least conductor lined that surrounds and is dielectrically isolated from both the first and second inner signal through-vias.

Abstract: The teachings of the present invention provide a method for modeling an integrated circuit system including a microchip, an integrated circuit package, and a printed circuit board. The method includes generating a configuration file including parasitics regarding ball grid arrays and vias intended for use in design of the integrated circuit system. A netlist may be generated using the configuration file. In accordance with a particular embodiment of the present invention, the operation of the integrated circuit system may be simulated to determine anticipated operating characteristics of the integrated circuit system.

Abstract: The teachings of the present invention provide a method for modeling an integrated circuit system including a microchip, an integrated circuit package, and a printed circuit board. The method includes generating a configuration file including parasitics regarding ball grid arrays and vias intended for use in design of the integrated circuit system. A netlist may be generated using the configuration file. In accordance with a particular embodiment of the present invention, the operation of the integrated circuit system may be simulated to determine anticipated operating characteristics of the integrated circuit system.

Abstract: A method for estimating noise in an integrated circuit substrate. A model file is created for a technology process for fabricating the integrated circuit. Noise generated by a digital circuit and input/output circuitry to be implemented in the integrated circuit are estimated. A substrate netlist is generated for the integrated circuit. A floorplan is determined for the integrated circuit. Transient simulations are run with predetermined input values. Finally, it is determined if predetermined noise requirements are met in results of the transient simulations.

Abstract: A method for estimating noise in an integrated circuit substrate. A model file is created for a technology process for fabricating the integrated circuit. Noise generated by a digital circuit and input/output circuitry to be implemented in the integrated circuit are estimated. A substrate netlist is generated for the integrated circuit. A floorplan is determined for the integrated circuit. Transient simulations are run with predetermined input values. Finally, it is determined if predetermined noise requirements are met in results of the transient simulations.

Abstract: For simulating electrostatic discharge and latch-up in semiconductor devices, the disclosed system and method for extracting parasitic devices combine input data from device layout, technology rules and doping profiles in order to extract netlists, element location and substrate resistance, analyze the layout for parasitic device formation, store these lists in a verification data base, translate the data base into a specific format, and finally output lists of ESD- and latch-up-sensitive elements and their locations in a specific format such as SPICE format.

Abstract: For quantitatively identifying sensitivities against electrostatic discharge (ESD) and latch-up in an integrated circuit (IC) design (before the actual IC is fabricated), the disclosed computer system and method combine information from the design netlist, the elements model, a safe operating file, and a list of stress simulations, and apply a simulated, quantified ESD event to the design. The observed sensitivities of the design elements to ESD and latch-up are then quantitatively analyzed, critical stress values are judged, and element failures recorded. Finally, element and location lists of sensitivities and failures are output in a specific format.

Abstract: For quantitatively identifying sensitivities against electrostatic discharge (ESD) and latch-up in an integrated circuit (IC) design (before the actual IC is fabricated), the disclosed computer system and method combine information from the design netlist, the elements model, a safe operating file, and a list of stress simulations, and apply a simulated, quantified ESD event to the design. The observed sensitivities of the design elements to ESD and latch-up are then quantitatively analyzed, critical stress values are judged, and element failures recorded. Finally, element and location lists of sensitivities and failures are output in a specific format.

Abstract: For simulating electrostatic discharge and latch-up in semiconductor devices, the disclosed system and method for extracting parasitic devices combine input data from device layout, technology rules and doping profiles in order to extract netlists, element location and substrate resistance, analyze the layout for parasitic device formation, store these lists in a verification data base, translate the data base into a specific format, and finally output lists of ESD- and latch-up-sensitive elements and their locations in a specific format such as SPICE format.